There are no models available for this part yet.
Overview of SI4670DY-T1-GE3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Internet of Things (IoT)
Audio and Video Systems
Smart Cities
Entertainment and Gaming
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI4670DY-T1-GE3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
SI4670DY-T1-GE3
|
Avnet Americas | Transistor MOSFET Array Dual N-Channel 25V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4670DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$0.4173 | Buy Now | |
DISTI #
781-SI4670DY-T1-GE3
|
Mouser Electronics | MOSFETs 25V Vds 16V Vgs SO-8 RoHS: Compliant | 0 |
|
$0.4250 / $0.4680 | Order Now | |
DISTI #
SI4670DY-T1-GE3
|
TTI | MOSFETs 25V Vds 16V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
|
$0.4250 / $0.4560 | Buy Now |
CAD Models for SI4670DY-T1-GE3 by Vishay Intertechnologies
Part Data Attributes for SI4670DY-T1-GE3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Package Description
|
HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
25 V
|
Drain Current-Max (ID)
|
7 A
|
Drain-source On Resistance-Max
|
0.023 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
MS-012AA
|
JESD-30 Code
|
R-PDSO-G8
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
2
|
Number of Terminals
|
8
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
2.8 W
|
Surface Mount
|
YES
|
Terminal Finish
|
Matte Tin (Sn)
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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