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Transistors Power Field-Effect Transistors SI4890DY-T1-E3

SI4890DY-T1-E3
Description: Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Overview of SI4890DY-T1-E3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 7 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

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Price & Stock for SI4890DY-T1-E3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 06J7951
Newark Mosfet, N Channel, 30V, 11A, Soic-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.5W Rohs Compliant: Yes |Vishay SI4890DY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.4600
  • 4,000 $1.3200
  • 6,000 $1.2700
  • 10,000 $1.2200
$1.2200 / $1.4600 Buy Now
DISTI # 18X0160
Newark Mosfet, N Channel, 30V, 11A, Soic-8, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:800Mv Rohs Compliant: Yes |Vishay SI4890DY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $1.7700
$1.7700 Buy Now
DISTI # SI4890DY-T1-E3
Avnet Americas Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4890DY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.1661
$1.1661 Buy Now
Bristol Electronics   1547
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1237
  • 1 $4.5000
  • 361 $2.4750
  • 809 $2.2500
$2.2500 / $4.5000 Buy Now
DISTI # SI4890DY-T1-E3
TTI MOSFETs 30V 11A 2.5W pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $1.2400
  • 5,000 $1.2100
  • 25,000 $1.1900
$1.1900 / $1.2400 Buy Now
DISTI # SI4890DY-T1-E3
EBV Elektronik Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R (Alt: SI4890DY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SI4890DY-T1-E3 by Vishay Intertechnologies
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Part Data Attributes for SI4890DY-T1-E3 by Vishay Intertechnologies
Parametric Data

SI4890DY-T1-E3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SOP-8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
11 A
Drain-source On Resistance-Max
0.012 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Pulsed Drain Current-Max (IDM)
50 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SI4890DY-T1-E3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
    VS

Alternate Parts for SI4890DY-T1-E3

This table gives cross-reference parts and alternative options found for SI4890DY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4890DY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FSS232 Power Field-Effect Transistor, 9A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd SI4890DY-T1-E3 vs FSS232
RF1S50N06 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Rochester Electronics LLC SI4890DY-T1-E3 vs RF1S50N06
2SK2442 Power Field-Effect Transistor, 7A I(D), 30V, 0.048ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET SANYO Electric Co Ltd SI4890DY-T1-E3 vs 2SK2442
2SK2556 Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET SANYO Electric Co Ltd SI4890DY-T1-E3 vs 2SK2556
UPA1700A 7A, 30V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8 Renesas Electronics Corporation SI4890DY-T1-E3 vs UPA1700A
PHN1018 TRANSISTOR 9.6 A, 25 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors SI4890DY-T1-E3 vs PHN1018
SI4800 TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors SI4890DY-T1-E3 vs SI4800
PHN1011 TRANSISTOR 11 A, 25 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLATIC, SO-8, FET General Purpose Power NXP Semiconductors SI4890DY-T1-E3 vs PHN1011
IRF7842PBF Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier SI4890DY-T1-E3 vs IRF7842PBF
BSO302SN Power Field-Effect Transistor, 9.8A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG SI4890DY-T1-E3 vs BSO302SN

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