Part Details for SI4931DY-T1-GE3 by Vishay Siliconix
Overview of SI4931DY-T1-GE3 by Vishay Siliconix
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for SI4931DY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4931DY-T1-GE3CT-ND
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DigiKey | MOSFET 2P-CH 12V 6.7A 8SOIC Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
19212 In Stock |
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$0.4439 / $1.1800 | Buy Now |
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New Advantage Corporation | Dual P-Channel 12 V 18 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 10000 |
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$0.6667 / $0.7143 | Buy Now |
Part Details for SI4931DY-T1-GE3
SI4931DY-T1-GE3 CAD Models
SI4931DY-T1-GE3 Part Data Attributes
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SI4931DY-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SI4931DY-T1-GE3
Vishay Siliconix
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 6.7 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |