Datasheets
SI4936ADY-T1-E3 by:

Small Signal Field-Effect Transistor, 4.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8

Part Details for SI4936ADY-T1-E3 by Vishay Intertechnologies

Overview of SI4936ADY-T1-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for SI4936ADY-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 85W2151
Newark Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:5.9A, Continuous Drain Current Id P Channel:-, Drain Source On State Resistance P Channel:- Rohs Compliant: Yes |Vishay SI4936ADY-T1-E3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $1.1900
$1.1900 Buy Now
DISTI # 06J7983
Newark Dual N Channel Mosfet, 30V, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:5.9A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Vishay SI4936ADY-T1-E3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.9800
  • 4,000 $0.8840
  • 6,000 $0.8520
  • 10,000 $0.8200
$0.8200 / $0.9800 Buy Now
DISTI # SI4936ADY-T1-E3
Avnet Americas Transistor MOSFET Array Dual N-Channel 30V 4.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4936ADY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6078
  • 5,000 $0.5883
  • 10,000 $0.5688
  • 15,000 $0.5493
  • 20,000 $0.5281
  • 25,000 $0.5032
  • 250,000 $0.4784
$0.4784 / $0.6078 Buy Now
DISTI # 781-SI4936ADY-T1-E3
Mouser Electronics MOSFET 30V 5.9A 2W RoHS: Compliant 15896
  • 1 $1.5100
  • 10 $1.2600
  • 100 $0.9990
  • 250 $0.9220
  • 500 $0.8370
  • 1,000 $0.7530
$0.7530 / $1.5100 Buy Now
Future Electronics Dual N-Channel 30 V 0.036 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.6050
  • 5,000 $0.5900
  • 7,500 $0.5750
$0.5750 / $0.6050 Buy Now
Future Electronics Dual N-Channel 30 V 0.036 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.6050
  • 5,000 $0.5900
  • 7,500 $0.5750
$0.5750 / $0.6050 Buy Now
Bristol Electronics   3935
RFQ
DISTI # SI4936ADY-T1-E3
TTI MOSFET 30V 5.9A 2W pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $0.6220
  • 5,000 $0.6100
  • 7,500 $0.5980
  • 10,000 $0.5860
$0.5860 / $0.6220 Buy Now
DISTI # SI4936ADY-T1-E3
Avnet Americas Transistor MOSFET Array Dual N-Channel 30V 4.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4936ADY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6078
  • 5,000 $0.5883
  • 10,000 $0.5688
  • 15,000 $0.5493
  • 20,000 $0.5281
  • 25,000 $0.5032
  • 250,000 $0.4784
$0.4784 / $0.6078 Buy Now
Chip1Cloud MOSFET 2N-CH 30V 4.4A 8-SOIC 78215
RFQ
DISTI # SI4936ADY-T1-E3
EBV Elektronik Transistor MOSFET Array Dual N-Channel 30V 4.4A 8-Pin SOIC N T/R (Alt: SI4936ADY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 3 Days EBV - 0
Buy Now

Part Details for SI4936ADY-T1-E3

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SI4936ADY-T1-E3 Part Data Attributes:

SI4936ADY-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4936ADY-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 4.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code SOIC
Package Description SOIC-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

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