Part Details for SI6562DQ by Temic Semiconductors
Overview of SI6562DQ by Temic Semiconductors
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Energy and Power Systems
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Part Details for SI6562DQ
SI6562DQ CAD Models
SI6562DQ Part Data Attributes
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SI6562DQ
Temic Semiconductors
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Datasheet
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SI6562DQ
Temic Semiconductors
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | TEMIC SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G | |
| Number of Elements | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |