Datasheets
SI6926ADQ-T1-E3 by:

Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

Part Details for SI6926ADQ-T1-E3 by Vishay Intertechnologies

Overview of SI6926ADQ-T1-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for SI6926ADQ-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 85W2161
Newark Channel Type:Dual N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:4.1A, Continuous Drain Current Id P Channel:-, No. Of Pins:8Pins, Product Range:- Rohs Compliant: No |Vishay SI6926ADQ-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1,000 $0.7060
$0.7060 Buy Now
DISTI # 57J5704
Newark Dual N Channel Mosfet, 20V, Tssop, Full Reel, Channel Type:Dual N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:4.1A, No. Of Pins:8Pins, Product Range:- Rohs Compliant: Yes |Vishay SI6926ADQ-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.5660
  • 4,000 $0.5080
  • 6,000 $0.4900
  • 10,000 $0.4790
$0.4790 / $0.5660 Buy Now
DISTI # SI6926ADQ-T1-E3
Avnet Americas Trans MOSFET Array Dual N-CH 20V 4.1A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6926ADQ-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 6000
  • 3,000 $0.3679
  • 6,000 $0.3617
  • 12,000 $0.3555
  • 18,000 $0.3493
  • 24,000 $0.3431
$0.3431 / $0.3679 Buy Now
DISTI # 781-SI6926ADQ-T1-E3
Mouser Electronics MOSFET 20V Vds 8V Vgs TSSOP-8 RoHS: Compliant 38301
  • 1 $0.9300
  • 10 $0.7620
  • 100 $0.5930
  • 500 $0.5030
  • 1,000 $0.4500
  • 3,000 $0.4400
  • 9,000 $0.4240
$0.4240 / $0.9300 Buy Now
Future Electronics Dual N-Channel 20 V 30 mOhm Surface Mount Power Mosfet - TSSOP-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks Container: Reel 0
Reel
  • 3,000 $0.3800
  • 6,000 $0.3700
  • 9,000 $0.3700
  • 12,000 $0.3600
$0.3600 / $0.3800 Buy Now
Future Electronics Dual N-Channel 20 V 30 mOhm Surface Mount Power Mosfet - TSSOP-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3800
  • 6,000 $0.3700
  • 9,000 $0.3700
  • 12,000 $0.3600
$0.3600 / $0.3800 Buy Now
DISTI # SI6926ADQ-T1-E3
TTI MOSFET 20V Vds 8V Vgs TSSOP-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 15000
In Stock
  • 3,000 $0.4370
  • 6,000 $0.4280
  • 9,000 $0.4200
$0.4200 / $0.4370 Buy Now
DISTI # SI6926ADQ-T1-E3
TME Transistor: N-MOSFET x2, unipolar, 20V, 3.6A, 1W, TSSOP8 Min Qty: 1 0
  • 1 $1.4200
  • 5 $1.2700
  • 25 $1.1200
  • 100 $1.0200
  • 500 $0.9300
$0.9300 / $1.4200 RFQ
DISTI # SI6926ADQ-T1-E3
EBV Elektronik Trans MOSFET Array Dual N-CH 20V 4.1A 8-Pin TSSOP T/R (Alt: SI6926ADQ-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI6926ADQ-T1-E3

SI6926ADQ-T1-E3 CAD Models

SI6926ADQ-T1-E3 Part Data Attributes

SI6926ADQ-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI6926ADQ-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TSSOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI6926ADQ-T1-E3

This table gives cross-reference parts and alternative options found for SI6926ADQ-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI6926ADQ-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI6926ADQ-T1-GE3 Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP-8 Vishay Intertechnologies SI6926ADQ-T1-E3 vs SI6926ADQ-T1-GE3
Part Number Description Manufacturer Compare
2N5904 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, Solitron Devices Inc SI6926ADQ-T1-E3 vs 2N5904
SDF504 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc SI6926ADQ-T1-E3 vs SDF504
FDC5614PD87Z Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation SI6926ADQ-T1-E3 vs FDC5614PD87Z
NTGS3441BT1G 2200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 318G-02, TSOP-6 Rochester Electronics LLC SI6926ADQ-T1-E3 vs NTGS3441BT1G
NDS8926/S62Z 5500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments SI6926ADQ-T1-E3 vs NDS8926/S62Z
IRF7752GPBF Small Signal Field-Effect Transistor, 4.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, HALOGEN AND LEAD FREE, TSSOP-8 Infineon Technologies AG SI6926ADQ-T1-E3 vs IRF7752GPBF
2N5907 TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, HERMETIC SEALED, TO-78, 6 PIN, FET General Purpose Small Signal Micross Components SI6926ADQ-T1-E3 vs 2N5907
SDF506 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc SI6926ADQ-T1-E3 vs SDF506
SI6926ADQ-T1-GE3 Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP-8 Vishay Intertechnologies SI6926ADQ-T1-E3 vs SI6926ADQ-T1-GE3
FDW2503NZ Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Fairchild Semiconductor Corporation SI6926ADQ-T1-E3 vs FDW2503NZ

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