Datasheets
SI9435BDY-T1-E3 by:

Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for SI9435BDY-T1-E3 by Vishay Intertechnologies

Overview of SI9435BDY-T1-E3 by Vishay Intertechnologies

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Price & Stock for SI9435BDY-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 06J8231
Newark P Channel Mosfet, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V, Power Dissipation:2.5W Rohs Compliant: Yes |Vishay SI9435BDY-T1-E3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1765
  • 1 $0.4910
  • 10 $0.4910
  • 25 $0.4910
  • 50 $0.4500
  • 100 $0.4500
$0.4500 / $0.4910 Buy Now
DISTI # 79AH6571
Newark P-Channel 30-V (D-S) Mosfet Rohs Compliant: No |Vishay SI9435BDY-T1-E3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 20000
  • 2,500 $0.3540
  • 5,000 $0.3470
  • 10,000 $0.3450
  • 15,000 $0.3440
  • 25,000 $0.3420
$0.3420 / $0.3540 Buy Now
DISTI # 35K3498
Newark P Channel Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V, Product Range:- Rohs Compliant: Yes |Vishay SI9435BDY-T1-E3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $0.3540
  • 5,000 $0.3470
  • 10,000 $0.3450
  • 15,000 $0.3440
  • 25,000 $0.3420
$0.3420 / $0.3540 Buy Now
DISTI # SI9435BDY-T1-E3
Avnet Americas Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9435BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 20000
  • 2,500 $0.3200
$0.3200 Buy Now
DISTI # 06J8231
Avnet Americas Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J8231) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks, 1 Days Container: Ammo Pack 1765 Partner Stock
  • 1 $0.9220
  • 10 $0.7480
  • 25 $0.6970
  • 50 $0.6470
  • 100 $0.5960
$0.5960 / $0.9220 Buy Now
DISTI # 781-SI9435BDY-T1-E3
Mouser Electronics MOSFET 30V 5.7A 0.042Ohm RoHS: Compliant 20953
  • 1 $0.8600
  • 10 $0.6920
  • 100 $0.5460
  • 500 $0.4630
  • 1,000 $0.3770
  • 2,500 $0.3370
  • 10,000 $0.3240
$0.3240 / $0.8600 Buy Now
Future Electronics Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 10000
Reel
  • 2,500 $0.2850
  • 5,000 $0.2800
  • 7,500 $0.2750
  • 10,000 $0.2750
  • 12,500 $0.2650
$0.2650 / $0.2850 Buy Now
Future Electronics Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.2850
  • 5,000 $0.2800
  • 7,500 $0.2750
  • 10,000 $0.2750
  • 12,500 $0.2650
$0.2650 / $0.2850 Buy Now
Bristol Electronics   2841
RFQ
Bristol Electronics   5372
RFQ
Quest Components MOSFET Transistor, P-Channel, SO 80
  • 1 $0.2000
  • 26 $0.1600
  • 64 $0.0900
$0.0900 / $0.2000 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1384
  • 1 $1.0000
  • 121 $0.3000
  • 668 $0.2600
$0.2600 / $1.0000 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 2509
  • 1 $1.1500
  • 349 $0.4600
  • 1,740 $0.4025
$0.4025 / $1.1500 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1788
  • 1 $1.1500
  • 349 $0.4600
  • 1,740 $0.4025
$0.4025 / $1.1500 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1212
  • 1 $2.3600
  • 551 $0.9735
  • 1,028 $0.8850
$0.8850 / $2.3600 Buy Now
DISTI # SI9435BDY-T1-E3
TTI MOSFET 30V 5.7A 0.042Ohm pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 22500
In Stock
  • 2,500 $0.3020
  • 5,000 $0.2960
  • 7,500 $0.2900
  • 12,500 $0.2850
$0.2850 / $0.3020 Buy Now
DISTI # SI9435BDY-T1-E3.
TTI MOSFET 30V 5.7A 0.042Ohm pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Cut Tape Americas - 2470
In Stock
  • 10 $0.5940
$0.5940 Buy Now
DISTI # SI9435BDY-E3
TME Transistor: P-MOSFET, unipolar, -30V, -4.6A, 2.5W, SO8 Min Qty: 3 2727
  • 3 $0.4540
  • 10 $0.4300
  • 100 $0.3890
  • 500 $0.3530
  • 2,500 $0.3270
$0.3270 / $0.4540 Buy Now
DISTI # SI9435BDY-T1-E3
Avnet Asia Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R (Alt: SI9435BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days 0
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 791
  • 1 $0.9600
  • 100 $0.7200
  • 1,000 $0.6300
$0.6300 / $0.9600 Buy Now
DISTI # SI9435BDY-T1-E3
EBV Elektronik Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R (Alt: SI9435BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 4.1A 1.3W 42m10V5.7A 3V250uA 1PCSPChannel SOP-8 MOSFETs ROHS 834
  • 1 $0.6416
  • 10 $0.5466
  • 30 $0.4999
  • 100 $0.4531
  • 500 $0.4019
  • 1,000 $0.3873
$0.3873 / $0.6416 Buy Now
LCSC 30V 4.1A 42m5.7A10V 1.3W 3V250uA 1PCSPChannel SOIC-8 MOSFETs ROHS 774
  • 1 $0.4521
  • 10 $0.4013
  • 30 $0.3745
  • 100 $0.3491
  • 500 $0.3178
  • 1,000 $0.3103
$0.3103 / $0.4521 Buy Now

Part Details for SI9435BDY-T1-E3

SI9435BDY-T1-E3 CAD Models

SI9435BDY-T1-E3 Part Data Attributes:

SI9435BDY-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI9435BDY-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.1 A
Drain-source On Resistance-Max 0.042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI9435BDY-T1-E3

This table gives cross-reference parts and alternative options found for SI9435BDY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI9435BDY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI9435BDY-T1-GE3 TRANSISTOR 4100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI9435BDY-T1-E3 vs SI9435BDY-T1-GE3
SI9435BDY-T1-E3 TRANSISTOR 4100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI9435BDY-T1-E3 vs SI9435BDY-T1-E3
SI9435BDY-T1-GE3 Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI9435BDY-T1-E3 vs SI9435BDY-T1-GE3
SI9435BDY Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI9435BDY-T1-E3 vs SI9435BDY
Part Number Description Manufacturer Compare
SI9430DY Small Signal Field-Effect Transistor, 5.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9435BDY-T1-E3 vs SI9430DY
SI9435BDY-E3 Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Vishay Siliconix SI9435BDY-T1-E3 vs SI9435BDY-E3
SI9435BDY Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI9435BDY-T1-E3 vs SI9435BDY
SI9435BDY-T1-GE3 Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI9435BDY-T1-E3 vs SI9435BDY-T1-GE3
SI9435BDY-T1-GE3 TRANSISTOR 4100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI9435BDY-T1-E3 vs SI9435BDY-T1-GE3
SI9435BDY-T1-E3 TRANSISTOR 4100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI9435BDY-T1-E3 vs SI9435BDY-T1-E3

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