Datasheets
SIHA15N60E-E3 by:

Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for SIHA15N60E-E3 by Vishay Intertechnologies

Overview of SIHA15N60E-E3 by Vishay Intertechnologies

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Price & Stock for SIHA15N60E-E3

Part # Distributor Description Stock Price Buy
DISTI # 61X9226
Newark Mosfet, N Channel, 600V, 15A, To-220F, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:15A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay SIHA15N60E-E3 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.5200
  • 2,500 $1.3600
$1.3600 / $1.5200 Buy Now
DISTI # SIHA15N60E-E3
Avnet Americas N-CHANNEL 600V - Tape and Reel (Alt: SIHA15N60E-E3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.2152
$1.2152 Buy Now
DISTI # 78-SIHA15N60E-E3
Mouser Electronics MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant 697
  • 1 $2.9500
  • 10 $2.4500
  • 100 $1.9500
  • 250 $1.8000
  • 500 $1.6400
  • 1,000 $1.3900
  • 2,000 $1.3100
  • 5,000 $1.2700
$1.2700 / $2.9500 Buy Now
Future Electronics N-Channel 600 V 34 W 38 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 1,000 $1.2800
  • 2,000 $1.2600
  • 3,000 $1.2400
$1.2400 / $1.2800 Buy Now
Future Electronics N-Channel 600 V 34 W 38 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.2800
  • 2,000 $1.2600
  • 3,000 $1.2400
$1.2400 / $1.2800 Buy Now
DISTI # SIHA15N60E-E3
TTI MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $1.2500
$1.2500 Buy Now
DISTI # SIHA15N60E-E3
TME Transistor: N-MOSFET, unipolar, 600V, 9.6A, Idm: 39A, 34W, TO220FP Min Qty: 1 480
  • 1 $2.8100
  • 5 $2.5300
  • 25 $2.2300
  • 100 $2.0100
  • 500 $1.8800
$1.8800 / $2.8100 Buy Now
DISTI # SIHA15N60E-E3
EBV Elektronik Trans MOSFET N-CH 600V 15A 3-Pin TO-220 T/R (Alt: SIHA15N60E-E3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHA15N60E-E3

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SIHA15N60E-E3 Part Data Attributes

SIHA15N60E-E3 Vishay Intertechnologies
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SIHA15N60E-E3 Vishay Intertechnologies Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Avalanche Energy Rating (Eas) 102 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 34 W
Pulsed Drain Current-Max (IDM) 39 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 136 ns
Turn-on Time-Max (ton) 111 ns

Alternate Parts for SIHA15N60E-E3

This table gives cross-reference parts and alternative options found for SIHA15N60E-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHA15N60E-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPA15N60C3XKSA1 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 Infineon Technologies AG SIHA15N60E-E3 vs SPA15N60C3XKSA1
STF15NM60ND N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220FP package STMicroelectronics SIHA15N60E-E3 vs STF15NM60ND
SIHF15N60E-GE3 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3 Vishay Intertechnologies SIHA15N60E-E3 vs SIHF15N60E-GE3
TK14A65W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components SIHA15N60E-E3 vs TK14A65W5
IPA60R280C6XKSA1 Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 Infineon Technologies AG SIHA15N60E-E3 vs IPA60R280C6XKSA1
R6015ENX Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN ROHM Semiconductor SIHA15N60E-E3 vs R6015ENX

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