Part Details for SIHD3N50DT5-GE3 by Vishay Intertechnologies
Overview of SIHD3N50DT5-GE3 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHD3N50DT5-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHD3N50DT5-GE3
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Avnet Americas | - Tape and Reel (Alt: SIHD3N50DT5-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.3159 / $0.4013 | Buy Now |
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DISTI #
78-SIHD3N50DT5-GE3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 0 |
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$0.2920 / $0.3360 | Order Now |
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DISTI #
SIHD3N50DT5-GE3
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TTI | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.2930 / $0.3240 | Buy Now |
Part Details for SIHD3N50DT5-GE3
SIHD3N50DT5-GE3 CAD Models
SIHD3N50DT5-GE3 Part Data Attributes:
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SIHD3N50DT5-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHD3N50DT5-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 9 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 3.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 5.5 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHD3N50DT5-GE3
This table gives cross-reference parts and alternative options found for SIHD3N50DT5-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD3N50DT5-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHD3N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD3N50DT5-GE3 vs SIHD3N50D-GE3 |
| SIHU3N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD3N50DT5-GE3 vs SIHU3N50D-GE3 |
| SIHU3N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD3N50DT5-GE3 vs SIHU3N50D-E3 |
| FS3VS-9-T2 | Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Mitsubishi Electric | SIHD3N50DT5-GE3 vs FS3VS-9-T2 |
| SIHD3N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD3N50DT5-GE3 vs SIHD3N50D-E3 |
| SIHU3N50D-GE3 | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | SIHD3N50DT5-GE3 vs SIHU3N50D-GE3 |
| SIHD3N50D-GE3 | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHD3N50DT5-GE3 vs SIHD3N50D-GE3 |
| SIHU3N50D-E3 | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | SIHD3N50DT5-GE3 vs SIHU3N50D-E3 |
| 2SK1721(2-10S2B) | TRANSISTOR 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | SIHD3N50DT5-GE3 vs 2SK1721(2-10S2B) |
| SIHD3N50DT1-GE3 | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHD3N50DT5-GE3 vs SIHD3N50DT1-GE3 |