Part Details for SIHF740S-GE3 by Vishay Intertechnologies
Results Overview of SIHF740S-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Aerospace and Defense
SIHF740S-GE3 Information
SIHF740S-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIHF740S-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78-SIHF740S-GE3
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Mouser Electronics | MOSFETs MOSFET N-CHANNEL 400V RoHS: Compliant | 0 |
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$0.7340 / $2.5700 | Order Now |
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DISTI #
SIHF740S-GE3
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EBV Elektronik | (Alt: SIHF740S-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHF740S-GE3
SIHF740S-GE3 CAD Models
SIHF740S-GE3 Part Data Attributes
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SIHF740S-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHF740S-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 520 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for SIHF740S-GE3
This table gives cross-reference parts and alternative options found for SIHF740S-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF740S-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF740ST4 | STMicroelectronics | Check for Price | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | SIHF740S-GE3 vs IRF740ST4 |
| IRF740STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | SIHF740S-GE3 vs IRF740STRR |
| IRF740S | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | SIHF740S-GE3 vs IRF740S |
| IRF740S | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | SIHF740S-GE3 vs IRF740S |