Datasheets
SIHFL9014-GE3 by: Vishay Siliconix

TRANSISTOR 1800 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal

Part Details for SIHFL9014-GE3 by Vishay Siliconix

Overview of SIHFL9014-GE3 by Vishay Siliconix

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Part Details for SIHFL9014-GE3

SIHFL9014-GE3 CAD Models

SIHFL9014-GE3 Part Data Attributes

SIHFL9014-GE3 Vishay Siliconix
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SIHFL9014-GE3 Vishay Siliconix TRANSISTOR 1800 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1.8 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 31 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 40.6 ns
Turn-on Time-Max (ton) 74 ns

Alternate Parts for SIHFL9014-GE3

This table gives cross-reference parts and alternative options found for SIHFL9014-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFL9014-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHFL9014TR-GE3 TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Vishay Siliconix SIHFL9014-GE3 vs SIHFL9014TR-GE3
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Vishay Siliconix SIHFL9014-GE3 vs IRFL9014TR
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA Vishay Intertechnologies SIHFL9014-GE3 vs IRFL9014
IRFL9014TRPBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies SIHFL9014-GE3 vs IRFL9014TRPBF
IRFL9014TRPBF TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power Vishay Siliconix SIHFL9014-GE3 vs IRFL9014TRPBF
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Vishay Siliconix SIHFL9014-GE3 vs IRFL9014
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies SIHFL9014-GE3 vs IRFL9014PBF
Part Number Description Manufacturer Compare
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Vishay Siliconix SIHFL9014-GE3 vs IRFL9014
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies SIHFL9014-GE3 vs IRFL9014PBF
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Vishay Siliconix SIHFL9014-GE3 vs IRFL9014TR
SIHFL9014TR-GE3 TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Vishay Siliconix SIHFL9014-GE3 vs SIHFL9014TR-GE3
BSP171PL6327HTSA1 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG SIHFL9014-GE3 vs BSP171PL6327HTSA1
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA Vishay Intertechnologies SIHFL9014-GE3 vs IRFL9014
IRFL9014TRPBF TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power Vishay Siliconix SIHFL9014-GE3 vs IRFL9014TRPBF
IRFL9014TRPBF-BE3 Small Signal Field-Effect Transistor, 1.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Vishay Intertechnologies SIHFL9014-GE3 vs IRFL9014TRPBF-BE3

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