SIHFL9014TR-GE3
Description: Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN

Overview of SIHFL9014TR-GE3 by Vishay Intertechnologies

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Price & Stock for SIHFL9014TR-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 17W5623
Newark P-Channel 60V |Vishay SIHFL9014TR-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 2,500 $0.2740
$0.2740 Buy Now
DISTI # SIHFL9014TR-GE3
Avnet Americas P-CHANNEL 60V - Tape and Reel (Alt: SIHFL9014TR-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.2571
$0.2571 Buy Now
DISTI # 78-SIHFL9014TR-GE3
Mouser Electronics MOSFETs -60V Vds 20V Vgs SOT-223 RoHS: Compliant 59534
  • 1 $0.7600
  • 10 $0.6560
  • 100 $0.4540
  • 500 $0.3800
  • 1,000 $0.3230
  • 2,500 $0.2840
  • 5,000 $0.2720
  • 10,000 $0.2570
  • 25,000 $0.2520
$0.2520 / $0.7600 Buy Now
Future Electronics -60 V, 1.8 A, 0.5 mOhm, SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.2650
  • 5,000 $0.2600
  • 7,500 $0.2550
  • 10,000 $0.2550
  • 12,500 $0.2500
$0.2500 / $0.2650 Buy Now
Future Electronics -60 V, 1.8 A, 0.5 mOhm, SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks Container: Reel 0
Reel
  • 2,500 $0.2650
  • 5,000 $0.2600
  • 7,500 $0.2550
  • 10,000 $0.2550
  • 12,500 $0.2500
$0.2500 / $0.2650 Buy Now
DISTI # SIHFL9014TR-GE3
TTI MOSFETs -60V Vds 20V Vgs SOT-223 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 50 Container: Tube Americas - 0
  • 2,500 $0.2790
  • 5,000 $0.2690
  • 10,000 $0.2540
  • 25,000 $0.2490
$0.2490 / $0.2790 Buy Now

CAD Models for SIHFL9014TR-GE3 by Vishay Intertechnologies
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Part Data Attributes for SIHFL9014TR-GE3 by Vishay Intertechnologies

SIHFL9014TR-GE3
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SOT-223, 4 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
13 Weeks
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
140 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
1.8 A
Drain-source On Resistance-Max
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
31 pF
JEDEC-95 Code
TO-261AA
JESD-30 Code
R-PDSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
3.1 W
Pulsed Drain Current-Max (IDM)
14 A
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SIHFL9014TR-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
    VS

Alternate Parts for SIHFL9014TR-GE3

This table gives cross-reference parts and alternative options found for SIHFL9014TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFL9014TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSP171PH6327XTSA1 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG SIHFL9014TR-GE3 vs BSP171PH6327XTSA1
BSP171PH6327 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG SIHFL9014TR-GE3 vs BSP171PH6327
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA Vishay Intertechnologies SIHFL9014TR-GE3 vs IRFL9014
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies SIHFL9014TR-GE3 vs IRFL9014PBF
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA Vishay Intertechnologies SIHFL9014TR-GE3 vs IRFL9014TR
IRFL9014TRPBF TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power Vishay Siliconix SIHFL9014TR-GE3 vs IRFL9014TRPBF
Part Number Description Manufacturer Compare
BSP171PL6327HTSA1 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG SIHFL9014TR-GE3 vs BSP171PL6327HTSA1
BSP171PH6327XTSA1 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG SIHFL9014TR-GE3 vs BSP171PH6327XTSA1
BSP171PH6327 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG SIHFL9014TR-GE3 vs BSP171PH6327
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Intertechnologies SIHFL9014TR-GE3 vs IRFL9014PBF
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA Vishay Intertechnologies SIHFL9014TR-GE3 vs IRFL9014
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA Vishay Intertechnologies SIHFL9014TR-GE3 vs IRFL9014TR
IRFL9014TRPBF TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power Vishay Siliconix SIHFL9014TR-GE3 vs IRFL9014TRPBF

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