Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part #
Manufacturer
Description
Stock
Price
Buy
Details
Newark
P-Channel 60V |Vishay SIHFL9014TR-GE3
RoHS:
Not Compliant
Min Qty:
2500
Package Multiple:
1
Date Code:
0
Container:
Bulk
0
$0.2740
Buy Now
Details
Avnet Americas
P-CHANNEL 60V - Tape and Reel (Alt: SIHFL9014TR-GE3)
RoHS:
Compliant
Min Qty:
2500
Package Multiple:
2500
Lead time:
13 Weeks, 0 Days
Container:
Reel
0
$0.2571
Buy Now
Details
DISTI #
78-SIHFL9014TR-GE3
Mouser Electronics
MOSFETs -60V Vds 20V Vgs SOT-223
RoHS:
Compliant
59534
1
$0.7600
10
$0.6560
100
$0.4540
500
$0.3800
1,000
$0.3230
2,500
$0.2840
5,000
$0.2720
10,000
$0.2570
25,000
$0.2520
$0.2520 / $0.7600
Buy Now
Details
Future Electronics
-60 V, 1.8 A, 0.5 mOhm, SOT-223
RoHS:
Compliant
pbFree:
Yes
Min Qty:
2500
Package Multiple:
2500
Container:
Reel
0Reel
2,500
$0.2650
5,000
$0.2600
7,500
$0.2550
10,000
$0.2550
12,500
$0.2500
$0.2500 / $0.2650
Buy Now
Details
Future Electronics
-60 V, 1.8 A, 0.5 mOhm, SOT-223
RoHS:
Compliant
pbFree:
Yes
Min Qty:
2500
Package Multiple:
2500
Lead time:
13 Weeks
Container:
Reel
0Reel
2,500
$0.2650
5,000
$0.2600
7,500
$0.2550
10,000
$0.2550
12,500
$0.2500
$0.2500 / $0.2650
Buy Now
Details
TTI
MOSFETs -60V Vds 20V Vgs SOT-223
RoHS:
Compliant
pbFree:
Pb-Free
Min Qty:
2500
Package Multiple:
50
Container:
Tube
Americas - 0
2,500
$0.2790
5,000
$0.2690
10,000
$0.2540
25,000
$0.2490
$0.2490 / $0.2790
Buy Now
Part Symbol
Footprint
3D Model
VISHAY INTERTECHNOLOGY INC
Avalanche Energy Rating (Eas)
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level
Operating Temperature-Max
Operating Temperature-Min
Peak Reflow Temperature (Cel)
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Time@Peak Reflow Temperature-Max (s)
Transistor Element Material
Want to compare parts?
Vishay Intertechnologies
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
VS
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IRFL9014 - Vishay Intertechnologies
IRFL9014TR - Vishay Intertechnologies
IRFL9014TRPBF - Vishay Siliconix
This table gives cross-reference parts and alternative options found for SIHFL9014TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFL9014TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number
Description
Manufacturer
Compare
BSP171PH6327XTSA1
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon Technologies AG
SIHFL9014TR-GE3 vs BSP171PH6327XTSA1
BSP171PH6327
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon Technologies AG
SIHFL9014TR-GE3 vs BSP171PH6327
IRFL9014
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Vishay Intertechnologies
SIHFL9014TR-GE3 vs IRFL9014
IRFL9014PBF
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Vishay Intertechnologies
SIHFL9014TR-GE3 vs IRFL9014PBF
IRFL9014TR
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Vishay Intertechnologies
SIHFL9014TR-GE3 vs IRFL9014TR
IRFL9014TRPBF
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
Vishay Siliconix
SIHFL9014TR-GE3 vs IRFL9014TRPBF
Part Number
Description
Manufacturer
Compare
BSP171PL6327HTSA1
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon Technologies AG
SIHFL9014TR-GE3 vs BSP171PL6327HTSA1
BSP171PH6327XTSA1
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon Technologies AG
SIHFL9014TR-GE3 vs BSP171PH6327XTSA1
BSP171PH6327
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Infineon Technologies AG
SIHFL9014TR-GE3 vs BSP171PH6327
IRFL9014PBF
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Vishay Intertechnologies
SIHFL9014TR-GE3 vs IRFL9014PBF
IRFL9014
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Vishay Intertechnologies
SIHFL9014TR-GE3 vs IRFL9014
IRFL9014TR
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Vishay Intertechnologies
SIHFL9014TR-GE3 vs IRFL9014TR
IRFL9014TRPBF
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
Vishay Siliconix
SIHFL9014TR-GE3 vs IRFL9014TRPBF