Part Details for BSP171PH6327 by Infineon Technologies AG
Overview of BSP171PH6327 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSP171PH6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1000 |
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RFQ | ||
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Bristol Electronics | Min Qty: 7 | 701 |
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$0.2640 / $0.8250 | Buy Now |
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Quest Components | 560 |
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$0.3300 / $1.1000 | Buy Now | |
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ComSIT USA | SIPMOS SMALL SIGNAL TRANSISTOR Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 20000 |
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RFQ | |
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LCSC | 60V 1.9A 300m10V1.9A 1.8W 2V460uA 1 Piece P-Channel SOT-223-4 MOSFETs ROHS | 2390 |
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$0.7113 / $1.1880 | Buy Now |
Part Details for BSP171PH6327
BSP171PH6327 CAD Models
BSP171PH6327 Part Data Attributes
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BSP171PH6327
Infineon Technologies AG
Buy Now
Datasheet
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BSP171PH6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 1.9 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 55 pF | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSP171PH6327
This table gives cross-reference parts and alternative options found for BSP171PH6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP171PH6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFL9014TRPBF | TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power | Vishay Siliconix | BSP171PH6327 vs IRFL9014TRPBF |
IRFL9014PBF | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | Vishay Intertechnologies | BSP171PH6327 vs IRFL9014PBF |
IRFL9014TR | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | Vishay Intertechnologies | BSP171PH6327 vs IRFL9014TR |
IRFL9014TRPBF-BE3 | Small Signal Field-Effect Transistor, 1.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | Vishay Intertechnologies | BSP171PH6327 vs IRFL9014TRPBF-BE3 |
SP001058824 | Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | BSP171PH6327 vs SP001058824 |
SIHFL9014-GE3 | TRANSISTOR 1800 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Small Signal | Vishay Siliconix | BSP171PH6327 vs SIHFL9014-GE3 |
IRFL9014 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | Vishay Intertechnologies | BSP171PH6327 vs IRFL9014 |
IRFL9014TRPBF | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN | Vishay Intertechnologies | BSP171PH6327 vs IRFL9014TRPBF |