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Transistors Power Field-Effect Transistors SIHFR120TR-GE3

Transistors
SIHFR120TR-GE3
Description: TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power

Overview of SIHFR120TR-GE3 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy

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Part Data Attributes for SIHFR120TR-GE3 by Vishay Siliconix
Parametric Data

SIHFR120TR-GE3
Vishay Siliconix
Buy Now
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TO-252AA
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
210 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
7.7 A
Drain-source On Resistance-Max
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
34 pF
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
42 W
Pulsed Drain Current-Max (IDM)
31 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SIHFR120TR-GE3
    Vishay Siliconix
    TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power
    VS

Alternate Parts for SIHFR120TR-GE3

This table gives cross-reference parts and alternative options found for SIHFR120TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR120TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR120PBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR120TR-GE3 vs IRFR120PBF
IRFR120T Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation SIHFR120TR-GE3 vs IRFR120T
IRFR120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation SIHFR120TR-GE3 vs IRFR120
IRFR120 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 Vishay Siliconix SIHFR120TR-GE3 vs IRFR120
IRFR120TRRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies SIHFR120TR-GE3 vs IRFR120TRRPBF
SIHFR120-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR120TR-GE3 vs SIHFR120-GE3
IRFR120TRLPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies SIHFR120TR-GE3 vs IRFR120TRLPBF
IRFR120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor SIHFR120TR-GE3 vs IRFR120
IRFR120_R4941 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation SIHFR120TR-GE3 vs IRFR120_R4941
SIHFR120TRL-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR120TR-GE3 vs SIHFR120TRL-GE3
Part Number Description Manufacturer Compare
IRFR120A Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SIHFR120TR-GE3 vs IRFR120A
IRFR120A Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor SIHFR120TR-GE3 vs IRFR120A
SIHFR120-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR120TR-GE3 vs SIHFR120-GE3
SIHFR120TRL-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR120TR-GE3 vs SIHFR120TRL-GE3
IRFR120_R4941 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation SIHFR120TR-GE3 vs IRFR120_R4941
IRFR120TRLPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies SIHFR120TR-GE3 vs IRFR120TRLPBF
IRFR120PBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR120TR-GE3 vs IRFR120PBF
IRFR120TRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies SIHFR120TR-GE3 vs IRFR120TRPBF
IRFR120ATM Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SIHFR120TR-GE3 vs IRFR120ATM
IRFR120T Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation SIHFR120TR-GE3 vs IRFR120T

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