Part Details for SIHFR9310-GE3 by Vishay Intertechnologies
Overview of SIHFR9310-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHFR9310-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHFR9310-GE3
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Avnet Americas | Trans MOSFET P-CH 400V 1.8A 3-Pin TO-252 T/R - Tape and Reel (Alt: SIHFR9310-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2741 / $0.3482 | Buy Now |
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DISTI #
78-SIHFR9310-GE3
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Mouser Electronics | MOSFET -400V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant | 2400 |
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$0.2530 / $0.7700 | Buy Now |
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Future Electronics | -400V,1.8A.7Ohm,DPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.2500 / $0.2700 | Buy Now |
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Future Electronics | -400V,1.8A.7Ohm,DPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2500 / $0.2700 | Buy Now |
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DISTI #
SIHFR9310-GE3
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TTI | MOSFET -400V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.2540 / $0.2820 | Buy Now |
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DISTI #
SIHFR9310-GE3
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TME | Transistor: P-MOSFET, unipolar, -400V, -1.1A, Idm: -7.2A, 50W Min Qty: 1 | 0 |
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$0.4260 / $0.7590 | RFQ |
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DISTI #
SIHFR9310-GE3
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EBV Elektronik | Trans MOSFET P-CH 400V 1.8A 3-Pin TO-252 T/R (Alt: SIHFR9310-GE3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHFR9310-GE3
SIHFR9310-GE3 CAD Models
SIHFR9310-GE3 Part Data Attributes
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SIHFR9310-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHFR9310-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 92 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 7.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHFR9310-GE3
This table gives cross-reference parts and alternative options found for SIHFR9310-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR9310-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR9310TRR | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | SIHFR9310-GE3 vs IRFR9310TRR |
| IRFR9310PBF | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | SIHFR9310-GE3 vs IRFR9310PBF |
| SIHFR9310TRL-GE3 | TRANSISTOR 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR9310-GE3 vs SIHFR9310TRL-GE3 |
| IRFR9310TRLPBF | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Intertechnologies | SIHFR9310-GE3 vs IRFR9310TRLPBF |
| SIHFR9310-GE3 | TRANSISTOR 1.8 A, 400 V, 7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR9310-GE3 vs SIHFR9310-GE3 |
| SIHFR9310TRR-GE3 | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | SIHFR9310-GE3 vs SIHFR9310TRR-GE3 |
| IRFR9310TRRPBF | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFR9310-GE3 vs IRFR9310TRRPBF |
| IRFR9310PBF | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Intertechnologies | SIHFR9310-GE3 vs IRFR9310PBF |
| IRFR9310TRL | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | SIHFR9310-GE3 vs IRFR9310TRL |
| IRFR9310TRLPBF | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFR9310-GE3 vs IRFR9310TRLPBF |