Part Details for SIHG32N50D-E3 by Vishay Intertechnologies
Overview of SIHG32N50D-E3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHG32N50D-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHG32N50D-E3
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Avnet Americas | Trans MOSFET N-CH 500V 30A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG32N50D-E3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$2.5551 / $3.2460 | Buy Now |
DISTI #
78-SIHG32N50D-E3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs TO-247AC RoHS: Compliant | 469 |
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$2.6900 / $5.0700 | Buy Now |
DISTI #
SIHG32N50D-E3
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TTI | MOSFET 500V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.6100 / $2.7000 | Buy Now |
DISTI #
SIHG32N50D-E3
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EBV Elektronik | Trans MOSFET N-CH 500V 30A 3-Pin TO-247AC (Alt: SIHG32N50D-E3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHG32N50D-E3
SIHG32N50D-E3 CAD Models
SIHG32N50D-E3 Part Data Attributes
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SIHG32N50D-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHG32N50D-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 225 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 89 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHG32N50D-E3
This table gives cross-reference parts and alternative options found for SIHG32N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG32N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIHG32N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHG32N50D-E3 vs SIHG32N50D-E3 |
SIHG32N50D-GE3 | Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | Vishay Intertechnologies | SIHG32N50D-E3 vs SIHG32N50D-GE3 |