Datasheets
SIHG32N50D-E3 by:

Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,

Part Details for SIHG32N50D-E3 by Vishay Intertechnologies

Overview of SIHG32N50D-E3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHG32N50D-E3

Part # Distributor Description Stock Price Buy
DISTI # SIHG32N50D-E3
Avnet Americas Trans MOSFET N-CH 500V 30A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG32N50D-E3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 500 $3.2460
  • 1,000 $3.1419
  • 2,000 $3.0378
  • 3,000 $2.9148
  • 4,000 $2.8201
  • 5,000 $2.6876
  • 50,000 $2.5551
$2.5551 / $3.2460 Buy Now
DISTI # 78-SIHG32N50D-E3
Mouser Electronics MOSFET 500V Vds 30V Vgs TO-247AC RoHS: Compliant 469
  • 1 $5.0700
  • 10 $4.2600
  • 25 $3.4700
  • 100 $3.1400
  • 250 $3.0100
  • 500 $2.9700
  • 1,000 $2.8100
  • 2,500 $2.6900
$2.6900 / $5.0700 Buy Now
DISTI # SIHG32N50D-E3
TTI MOSFET 500V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube Americas - 0
  • 500 $2.7000
  • 1,000 $2.6100
$2.6100 / $2.7000 Buy Now
DISTI # SIHG32N50D-E3
EBV Elektronik Trans MOSFET N-CH 500V 30A 3-Pin TO-247AC (Alt: SIHG32N50D-E3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHG32N50D-E3

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SIHG32N50D-E3 Part Data Attributes

SIHG32N50D-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHG32N50D-E3 Vishay Intertechnologies Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 225 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 89 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHG32N50D-E3

This table gives cross-reference parts and alternative options found for SIHG32N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG32N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHG32N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIHG32N50D-E3 vs SIHG32N50D-E3
SIHG32N50D-GE3 Power Field-Effect Transistor, 30A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, Vishay Intertechnologies SIHG32N50D-E3 vs SIHG32N50D-GE3
Part Number Description Manufacturer Compare
IXFH32N50S Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IXYS Corporation SIHG32N50D-E3 vs IXFH32N50S
APT5015BVRG Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc SIHG32N50D-E3 vs APT5015BVRG
IXFH30N50S Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IXYS Corporation SIHG32N50D-E3 vs IXFH30N50S
APT5020SLC 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 Microsemi Corporation SIHG32N50D-E3 vs APT5020SLC
IXFT26N50QSN Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3/2 PIN IXYS Corporation SIHG32N50D-E3 vs IXFT26N50QSN
APT6029SFLLG Power Field-Effect Transistor, 21A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 Microsemi Corporation SIHG32N50D-E3 vs APT6029SFLLG
SIHG32N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIHG32N50D-E3 vs SIHG32N50D-E3
APT5015BLC 32A, 500V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Microsemi Corporation SIHG32N50D-E3 vs APT5015BLC
IXFQ26N50Q Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXYS Corporation SIHG32N50D-E3 vs IXFQ26N50Q
APT5015BLC Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Advanced Power Technology SIHG32N50D-E3 vs APT5015BLC

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