SIHS36N50D-GE3
Vishay Intertechnologies
Description: Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA,

Overview of SIHS36N50D-GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 6 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Renewable Energy

Price & Stock for SIHS36N50D-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 25AJ2826
Newark Mosfet, N-Ch, 500V, 36A, Super-247 Rohs Compliant: Yes |Vishay SIHS36N50D-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1481
  • 1 $6.3500
  • 10 $5.8500
  • 25 $5.4300
  • 50 $5.0000
  • 100 $4.7700
  • 250 $4.5300
$4.5300 / $6.3500 Buy Now
DISTI # SIHS36N50D-GE3
Avnet Americas MOSFET N-CHANNEL 500V (Alt: SIHS36N50D-GE3) RoHS: Not Compliant Min Qty: 480 Package Multiple: 480 0
  • 480 $3.2406
$3.2406 Buy Now
Future Electronics D Series Power N-Channel Mosfet 550V 36A Super-247Package PB & halogen free RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 30 Container: Tube 0
Tube
  • 1 $5.4900
  • 20 $5.2500
  • 50 $5.1300
  • 200 $4.9700
  • 500 $4.7000
$4.7000 / $5.4900 Buy Now
DISTI # SIHS36N50D-GE3
TME Transistor: N-MOSFET, unipolar, 500V, 23A, Idm: 112A, 446W, SUPER247 Min Qty: 1 0
  • 1 $8.0600
  • 5 $7.2600
  • 30 $6.4100
  • 150 $5.7600
  • 480 $5.3800
$5.3800 / $8.0600 RFQ
DISTI # SIHS36N50D-GE3
EBV Elektronik Transistor MOSFET N-CH 500V 36A 3-Pin Super-247 (Alt: SIHS36N50D-GE3) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 13 Weeks, 0 Days EBV - 600
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 480
  • 30 $7.3300
  • 480 $6.7800
$6.7800 / $7.3300 Buy Now

CAD Models for SIHS36N50D-GE3 by Vishay Intertechnologies
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Part Data Attributes for SIHS36N50D-GE3 by Vishay Intertechnologies

SIHS36N50D-GE3
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
332 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
36 A
Drain-source On Resistance-Max
0.13 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
25 pF
JEDEC-95 Code
TO-274AA
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
446 W
Pulsed Drain Current-Max (IDM)
112 A
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
221 ns
Turn-on Time-Max (ton)
200 ns
Want to compare parts?
  1. SIHS36N50D-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA,
    VS

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