Parametric results for: SIHS36N50D-GE3 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

332.0 mJ 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

500 V 1

1 hit Apply

Drain Current-Max (ID) (1)

36 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

130 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

25 pF 1

1 hit Apply

TO-274AA 1

1 hit Apply

R-PSIP-T3 1

1 hit Apply

Manufacturer (1)

Vishay Intertechnologies 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

IN-LINE 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

446 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply