Datasheets
SIR418DP-T1-GE3 by:

Power Field-Effect Transistor, 23.5A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for SIR418DP-T1-GE3 by Vishay Intertechnologies

Overview of SIR418DP-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SIR418DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 35R0022
Newark N Channel Mosfet, 40V, 40A, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V, No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SIR418DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.6130
  • 4,000 $0.5500
  • 6,000 $0.5310
  • 10,000 $0.5190
$0.5190 / $0.6130 Buy Now
DISTI # 35R6197
Newark N Channel Mosfet, 40V, 40A, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V, No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SIR418DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 250 $0.7950
$0.7950 Buy Now
DISTI # 38AH2322
Newark N-Channel 40-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SIR418DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.6710
  • 4,000 $0.6130
  • 6,000 $0.5930
  • 10,000 $0.5820
$0.5820 / $0.6710 Buy Now
DISTI # SIR418DP-T1-GE3
Avnet Americas Trans MOSFET N-CH 40V 23.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR418DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.6688
  • 6,000 $0.6474
  • 12,000 $0.6260
  • 18,000 $0.6006
  • 24,000 $0.5811
  • 30,000 $0.5538
  • 300,000 $0.5265
$0.5265 / $0.6688 Buy Now
DISTI # 781-SIR418DP-GE3
Mouser Electronics MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 5658
  • 1 $1.3000
  • 10 $1.0700
  • 100 $0.8170
  • 500 $0.7020
  • 1,000 $0.5720
  • 3,000 $0.5300
  • 6,000 $0.5120
  • 9,000 $0.4880
$0.4880 / $1.3000 Buy Now
Future Electronics 40V 40A 0.005 Ohm N-ch PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 3,000 $0.5200
  • 6,000 $0.5100
  • 9,000 $0.5000
$0.5000 / $0.5200 Buy Now
Future Electronics 40V 40A 0.005 Ohm N-ch PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5200
  • 6,000 $0.5100
  • 9,000 $0.5000
$0.5000 / $0.5200 Buy Now
DISTI # SIR418DP-T1-GE3
TTI MOSFET 40V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 18000
In Stock
  • 3,000 $0.5250
  • 6,000 $0.5070
  • 9,000 $0.4830
$0.4830 / $0.5250 Buy Now
DISTI # SIR418DP-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 40A, Idm: 70A, 39W Min Qty: 3000 0
  • 3,000 $0.7600
$0.7600 RFQ
DISTI # SIR418DP-T1-GE3
EBV Elektronik Trans MOSFET N-CH 40V 23.5A 8-Pin PowerPAK SO T/R (Alt: SIR418DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIR418DP-T1-GE3

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SIR418DP-T1-GE3 Part Data Attributes

SIR418DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR418DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 23.5A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 23.5 A
Drain-source On Resistance-Max 0.005 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5
JESD-609 Code e3
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 39 W
Pulsed Drain Current-Max (IDM) 70 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIR418DP-T1-GE3

This table gives cross-reference parts and alternative options found for SIR418DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR418DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIRA12DP-T1-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIR418DP-T1-GE3 vs SIRA12DP-T1-GE3
SIR164DP-T1-GE3 Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIR418DP-T1-GE3 vs SIR164DP-T1-GE3
SIRA12DP-T1-GE3 Power Field-Effect Transistor, 25A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SIR418DP-T1-GE3 vs SIRA12DP-T1-GE3

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