Part Details for SN7000E6296 by Siemens
Overview of SN7000E6296 by Siemens
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Part Details for SN7000E6296
SN7000E6296 CAD Models
SN7000E6296 Part Data Attributes
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SN7000E6296
Siemens
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Datasheet
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SN7000E6296
Siemens
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.25 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SN7000E6296
This table gives cross-reference parts and alternative options found for SN7000E6296. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SN7000E6296, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7000_D26Z | N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/TAPE REEL | Fairchild Semiconductor Corporation | SN7000E6296 vs 2N7000_D26Z |
| 2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Supertex Inc | SN7000E6296 vs 2N7000 |
| 2N7000ZL1 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | SN7000E6296 vs 2N7000ZL1 |
| 2N7000RLRM | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | SN7000E6296 vs 2N7000RLRM |
| 2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Samsung Semiconductor | SN7000E6296 vs 2N7000 |
| 2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Lite-On Semiconductor Corporation | SN7000E6296 vs 2N7000 |
| 2N7000RLRA | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, CASE 29-11, TO-226, 3 PIN | Rochester Electronics LLC | SN7000E6296 vs 2N7000RLRA |
| 2N7000G4 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, | TT Electronics Resistors | SN7000E6296 vs 2N7000G4 |
| 2N7000RLRMG | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, CASE 29-11, TO-226, 3 PIN | Rochester Electronics LLC | SN7000E6296 vs 2N7000RLRMG |
| 2N7000 | TRANSISTOR 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal | National Semiconductor Corporation | SN7000E6296 vs 2N7000 |