Part Details for SPB20N60S5ATMA1 by Infineon Technologies AG
Overview of SPB20N60S5ATMA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPB20N60S5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPB20N60S5ATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB20N60S5ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$2.3588 | Buy Now |
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Future Electronics | N-Channel 600 V 20 A (Tc) 208 W SMT Cool MOS™ Power Transistor - TO-263-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Container: Reel | 4000Reel |
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$2.4400 | Buy Now |
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DISTI #
SP000012112
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EBV Elektronik | Trans MOSFET N-CH 600V 20A 3-Pin TO-263 T/R (Alt: SP000012112) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 2000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 2000 |
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$4.4200 / $4.7800 | Buy Now |
Part Details for SPB20N60S5ATMA1
SPB20N60S5ATMA1 CAD Models
SPB20N60S5ATMA1 Part Data Attributes
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SPB20N60S5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPB20N60S5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1999-11-09 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB20N60S5ATMA1
This table gives cross-reference parts and alternative options found for SPB20N60S5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB20N60S5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STW28N65M2 | N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package | STMicroelectronics | SPB20N60S5ATMA1 vs STW28N65M2 |
| SIHP22N60E-E3 | TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Vishay Siliconix | SPB20N60S5ATMA1 vs SIHP22N60E-E3 |
| SIHB180N60E-GE3 | Power Field-Effect Transistor, | Vishay Intertechnologies | SPB20N60S5ATMA1 vs SIHB180N60E-GE3 |
| IPP60R190C6XKSA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPB20N60S5ATMA1 vs IPP60R190C6XKSA1 |
| Q67040-S4550 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPB20N60S5ATMA1 vs Q67040-S4550 |
| STI23NM60ND | 19.5A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN | STMicroelectronics | SPB20N60S5ATMA1 vs STI23NM60ND |
| SPW24N60CFDFKSA1 | Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPB20N60S5ATMA1 vs SPW24N60CFDFKSA1 |
| SPP20N60C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPB20N60S5ATMA1 vs SPP20N60C3XKSA1 |
| APT20N60BCF | Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | SPB20N60S5ATMA1 vs APT20N60BCF |
| SIHP22N60E-E3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPB20N60S5ATMA1 vs SIHP22N60E-E3 |