SPD23N05
Description: Power Field-Effect Transistor, 23A I(D), 55V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Overview of SPD23N05 by Siemens

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 7 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for SPD23N05 by Siemens
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Part Data Attributes for SPD23N05 by Siemens

SPD23N05
Siemens
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SIEMENS A G
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
23 A
Drain-source On Resistance-Max
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Element Material
SILICON
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  1. SPD23N05
    Siemens
    Power Field-Effect Transistor, 23A I(D), 55V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    VS

Alternate Parts for SPD23N05

This table gives cross-reference parts and alternative options found for SPD23N05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD23N05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFD16N06SM 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC SPD23N05 vs RFD16N06SM
IPD50N06S2-14 50A, 55V, 0.0144ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3 Rochester Electronics LLC SPD23N05 vs IPD50N06S2-14
SUB70N03-09P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix SPD23N05 vs SUB70N03-09P
RFD16N06SM9A 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC SPD23N05 vs RFD16N06SM9A
SPD28N05L Power Field-Effect Transistor, 28A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens SPD23N05 vs SPD28N05L
BUK7618-55/T3 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors SPD23N05 vs BUK7618-55/T3
SPD02N60C3 1.8A, 600V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 Rochester Electronics LLC SPD23N05 vs SPD02N60C3

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