Datasheets
SPP15P10P by:

Power Field-Effect Transistor, 15A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for SPP15P10P by Infineon Technologies AG

Overview of SPP15P10P by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SPP15P10P

Part # Distributor Description Stock Price Buy
DISTI # SPP15P10P
Avnet Americas - Rail/Tube (Alt: SPP15P10P) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 15 Partner Stock
RFQ
Rochester Electronics SPP15P10 - Power Field-Effect Transistor, 15A, 100V, 0.24ohm, P-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 15
  • 1 $0.5979
  • 25 $0.5859
  • 100 $0.5620
  • 500 $0.5381
  • 1,000 $0.5082
$0.5082 / $0.5979 Buy Now

Part Details for SPP15P10P

SPP15P10P CAD Models

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SPP15P10P Part Data Attributes

SPP15P10P Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPP15P10P Infineon Technologies AG Power Field-Effect Transistor, 15A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 230 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.24 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 128 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPP15P10P

This table gives cross-reference parts and alternative options found for SPP15P10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP15P10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPP15P10P 15A, 100V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC SPP15P10P vs SPP15P10P
Part Number Description Manufacturer Compare
IRF9632 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SPP15P10P vs IRF9632
TK20J60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components SPP15P10P vs TK20J60W5
SPP80N06S2-09 Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPP15P10P vs SPP80N06S2-09
IRF9612 Power Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor SPP15P10P vs IRF9612
STW26NM60N-H 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 STMicroelectronics SPP15P10P vs STW26NM60N-H
TK20E60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V Toshiba America Electronic Components SPP15P10P vs TK20E60W5
VP1116N5 Power Field-Effect Transistor, 1.8A I(D), 160V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc SPP15P10P vs VP1116N5
934055716127 Power Field-Effect Transistor Nexperia SPP15P10P vs 934055716127
SML50B26F 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TT Electronics Power and Hybrid / Semelab Limited SPP15P10P vs SML50B26F
2SK3298 Power Field-Effect Transistor, 7.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group SPP15P10P vs 2SK3298

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