Part Details for SPP20N60CFD by Infineon Technologies AG
Results Overview of SPP20N60CFD by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SPP20N60CFD Information
SPP20N60CFD by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPP20N60CFD
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 62 |
|
RFQ | ||
|
DISTI #
SPP20N60CFD
|
TME | Transistor: N-MOSFET, unipolar, 600V, 13.1A, 208W, PG-TO220-3 Min Qty: 1 | 0 |
|
$5.2600 / $7.1000 | RFQ |
|
|
Component Electronics, Inc | IN STOCK SHIP TODAY | 11 |
|
Buy Now | |
|
DISTI #
SPP20N60CFD
|
Maritex | MOSFET Devices, INFINEON, SPP20N60CFD, 650 V, 20.7 A, 20 V, 208 W Min Qty: 1 Package Multiple: 1 | 14099 |
|
$2.1020 | Buy Now |
|
|
Win Source Electronics | Cool MOS™ Power Transistor | 9839 |
|
$2.1186 / $3.1779 | Buy Now |
Part Details for SPP20N60CFD
SPP20N60CFD CAD Models
SPP20N60CFD Part Data Attributes
|
|
SPP20N60CFD
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPP20N60CFD
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Green, Plastic, To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 690 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20.7 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 208 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for SPP20N60CFD
This table gives cross-reference parts and alternative options found for SPP20N60CFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP20N60CFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP40NF03L | STMicroelectronics | $0.7435 | Power Field-Effect Transistor, 40A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | SPP20N60CFD vs STP40NF03L |
| STW7NK90Z | STMicroelectronics | $1.4575 | Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | SPP20N60CFD vs STW7NK90Z |
| APT50M75LLLG | Microchip Technology Inc | $21.2335 | MOSFET MOS 7 500 V 75 mOhm TO-264 | SPP20N60CFD vs APT50M75LLLG |
| SPD25N06S2-40 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | SPP20N60CFD vs SPD25N06S2-40 |
| FQB60N03L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 51A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SPP20N60CFD vs FQB60N03L |
| PHB42N03T | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 42A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SPP20N60CFD vs PHB42N03T |
| FQP90N08 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 71A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | SPP20N60CFD vs FQP90N08 |
| IXFK80N20Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264 | SPP20N60CFD vs IXFK80N20Q |
| STD5NE10-1 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | SPP20N60CFD vs STD5NE10-1 |
| IPD075N03LG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 50A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | SPP20N60CFD vs IPD075N03LG |
SPP20N60CFD Frequently Asked Questions (FAQ)
-
The maximum operating temperature of the SPP20N60CFD is 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation to ensure reliable operation.
-
To ensure proper cooling, make sure to attach a heat sink with a thermal resistance of less than 1°C/W. Apply a thin layer of thermal interface material (TIM) and ensure good contact between the heat sink and the MOSFET.
-
The recommended gate drive voltage for the SPP20N60CFD is between 10V and 15V. This ensures reliable switching and minimizes power losses.
-
Yes, the SPP20N60CFD is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is optimized for high-frequency operation, and consider the effects of parasitic inductance and capacitance.
-
Use a voltage clamp or a transient voltage suppressor (TVS) to protect the SPP20N60CFD from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator or an overcurrent protection IC.