Part Details for SPP20N65C3XKSA by Infineon Technologies AG
Overview of SPP20N65C3XKSA by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPP20N65C3XKSA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000681064
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EBV Elektronik | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-220 Tube (Alt: SP000681064) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Part Details for SPP20N65C3XKSA
SPP20N65C3XKSA CAD Models
SPP20N65C3XKSA Part Data Attributes
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SPP20N65C3XKSA
Infineon Technologies AG
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Datasheet
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SPP20N65C3XKSA
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 20.7 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 62.1 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPP20N65C3XKSA
This table gives cross-reference parts and alternative options found for SPP20N65C3XKSA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP20N65C3XKSA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHB21N60EF-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Vishay Intertechnologies | SPP20N65C3XKSA vs SIHB21N60EF-GE3 |
| FCPF165N65S3R0L | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, 1000-TUBE | onsemi | SPP20N65C3XKSA vs FCPF165N65S3R0L |
| SIHB22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SPP20N65C3XKSA vs SIHB22N65E-GE3 |
| STW23NM60N | 19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | SPP20N65C3XKSA vs STW23NM60N |
| SSF20NS60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPP20N65C3XKSA vs SSF20NS60 |
| SPB20N60S5ATMA1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPP20N65C3XKSA vs SPB20N60S5ATMA1 |
| STP24NM65N | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STMicroelectronics | SPP20N65C3XKSA vs STP24NM65N |
| Q67040-S4550 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPP20N65C3XKSA vs Q67040-S4550 |
| IPW60R190C6FKSA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPP20N65C3XKSA vs IPW60R190C6FKSA1 |
| SPW24N60CFDXK | Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPP20N65C3XKSA vs SPW24N60CFDXK |