Datasheets
SPU30P06P by:

30A, 60V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3

Part Details for SPU30P06P by Rochester Electronics LLC

Overview of SPU30P06P by Rochester Electronics LLC

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Part Details for SPU30P06P

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SPU30P06P Part Data Attributes

SPU30P06P Rochester Electronics LLC
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SPU30P06P Rochester Electronics LLC 30A, 60V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-251
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code unknown
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 250 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPU30P06P

This table gives cross-reference parts and alternative options found for SPU30P06P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPU30P06P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UTT25P06L-TN3-T Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, Unisonic Technologies Co Ltd SPU30P06P vs UTT25P06L-TN3-T
UTT25P06L-TN3-R Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd SPU30P06P vs UTT25P06L-TN3-R
MTB30P06VT4 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 onsemi SPU30P06P vs MTB30P06VT4
SPD30P06P-E4-E6327 Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG SPU30P06P vs SPD30P06P-E4-E6327
MTB30P06VT4G Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL onsemi SPU30P06P vs MTB30P06VT4G
MTB30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 onsemi SPU30P06P vs MTB30P06V
SPD30P06PG Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SPU30P06P vs SPD30P06PG
SPD30P06P Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG SPU30P06P vs SPD30P06P
AUIRFU5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 International Rectifier SPU30P06P vs AUIRFU5305
IRFU5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG SPU30P06P vs IRFU5305PBF

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