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Transistors / Power Field-Effect Transistors / SQM100N10-10_GE3
Datasheets
SQM100N10-10_GE3 by:

Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN

Part Details for SQM100N10-10_GE3 by Vishay Intertechnologies

Overview of SQM100N10-10_GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SQM100N10-10_GE3

Part # Distributor Description Stock Price Buy
DISTI # SQM100N10-10_GE3
Avnet Americas Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 800 $1.4453
$1.4453 Buy Now
DISTI # 78-SQM100N10-10_GE3
Mouser Electronics MOSFETs 100V 100A 375W AEC-Q101 Qualified RoHS: Compliant 4633
  • 1 $3.0000
  • 10 $2.5300
  • 25 $2.3800
  • 100 $2.0400
  • 250 $1.9300
  • 500 $1.8200
  • 800 $1.5500
  • 2,400 $1.5000
  • 4,800 $1.4000
$1.4000 / $3.0000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 800
Reel
  • 800 $1.4900
  • 1,600 $1.4700
  • 2,400 $1.4500
  • 3,200 $1.4400
$1.4400 / $1.4900 Buy Now
Future Electronics Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks Container: Reel 0
Reel
  • 800 $1.4900
  • 1,600 $1.4700
  • 2,400 $1.4500
  • 3,200 $1.4400
$1.4400 / $1.4900 Buy Now
DISTI # 82701477
Verical Trans MOSFET N-CH 100V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 800 Package Multiple: 800 Date Code: 2421 Americas - 800
  • 800 $1.5386
  • 1,600 $1.5171
  • 2,400 $1.4721
$1.4721 / $1.5386 Buy Now
DISTI # 81048238
Verical Trans MOSFET N-CH 100V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 800 Package Multiple: 800 Date Code: 2420 Americas - 800
  • 800 $2.2520
$2.2520 Buy Now

Part Details for SQM100N10-10_GE3

SQM100N10-10_GE3 CAD Models

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SQM100N10-10_GE3 Part Data Attributes

Parametric Data
SQM100N10-10_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQM100N10-10_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

Alternate Parts for SQM100N10-10_GE3

This table gives cross-reference parts and alternative options found for SQM100N10-10_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQM100N10-10_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SUM110N10-09 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Intertechnologies SQM100N10-10_GE3 vs SUM110N10-09
SUM110N10-09-E3 Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies SQM100N10-10_GE3 vs SUM110N10-09-E3
STB120NF10 110A, 100V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics SQM100N10-10_GE3 vs STB120NF10
IRF3610STRRPBF Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG SQM100N10-10_GE3 vs IRF3610STRRPBF
IRF3610STRLPBF Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG SQM100N10-10_GE3 vs IRF3610STRLPBF
Part Number Description Manufacturer Compare
IRF3610S Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG SQM100N10-10_GE3 vs IRF3610S
STB120NF10 110A, 100V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics SQM100N10-10_GE3 vs STB120NF10
IRF3610STRRPBF Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG SQM100N10-10_GE3 vs IRF3610STRRPBF

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