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Transistors Power Field-Effect Transistors IRF3610STRLPBF

IRF3610STRLPBF
Description: Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Overview of IRF3610STRLPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Automotive Motor control systems

Price & Stock for IRF3610STRLPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IRF3610STRLPBFCT-ND
DigiKey MOSFET N-CH 100V 103A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 184
In Stock
  • 1 $4.0700
  • 10 $2.6800
  • 100 $1.8896
  • 800 $1.4756
  • 1,600 $1.4520
$1.4520 / $4.0700 Buy Now
DISTI # IRF3610STRLPBF
Avnet Americas Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R Left Pb Free - Tape and Reel (Alt: IRF3610STRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 7 Partner Stock
RFQ
DISTI # IRF3610STRLPBF
Avnet Americas Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R Left Pb Free - Tape and Reel (Alt: IRF3610STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-IRF3610STRLPBF
Mouser Electronics MOSFETs N RoHS: Compliant 1280
  • 1 $3.1100
  • 10 $2.6100
  • 25 $2.4700
  • 100 $1.9100
  • 500 $1.5800
  • 800 $1.4500
$1.4500 / $3.1100 Buy Now
Future Electronics IRF3610 Series 100V 103A 333W 11.6mOhm Single N-Channel MOSFET D2PAK RoHS: Not Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Container: Reel 0
Reel
  • 800 $1.3600
  • 1,600 $1.3400
  • 2,400 $1.3300
  • 3,200 $1.3200
$1.3200 / $1.3600 Buy Now
Future Electronics IRF3610 Series 100V 103A 333W 11.6mOhm Single N-Channel MOSFET D2PAK RoHS: Not Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Container: Reel 0
Reel
  • 800 $1.3600
  • 1,600 $1.3400
  • 2,400 $1.3300
  • 3,200 $1.3200
$1.3200 / $1.3600 Buy Now
DISTI # 67205719
Verical Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2204 Americas - 10400
  • 800 $1.5585
$1.5585 Buy Now
DISTI # 25045298
Verical Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Americas - 800
  • 800 $1.3692
  • 1,600 $1.3555
$1.3555 / $1.3692 Buy Now
DISTI # 71240016
Verical Trans MOSFET N-CH 100V 103A 3-Pin(2+Tab) D2PAK T/R Min Qty: 8 Package Multiple: 1 Date Code: 2203 Americas - 640
  • 8 $4.1000
  • 12 $2.7000
  • 50 $2.3375
  • 100 $1.9125
$1.9125 / $4.1000 Buy Now
Rochester Electronics IRF3610S -HEXFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 7
  • 1 $1.6900
  • 25 $1.6600
  • 100 $1.5900
  • 500 $1.5200
  • 1,000 $1.4400
$1.4400 / $1.6900 Buy Now
DISTI # C1S322000680993
Chip1Stop MOSFET RoHS: Compliant 800
  • 800 $1.1100
$1.1100 Buy Now
DISTI # C1S322000601482
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 640
  • 1 $3.2800
  • 10 $2.1600
  • 50 $1.8700
  • 100 $1.5300
$1.5300 / $3.2800 Buy Now
DISTI # SP001574654
EBV Elektronik (Alt: SP001574654) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for IRF3610STRLPBF by Infineon Technologies AG
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Part Data Attributes for IRF3610STRLPBF by Infineon Technologies AG
Parametric Data

IRF3610STRLPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
460 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
103 A
Drain-source On Resistance-Max
0.0116 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
333 W
Pulsed Drain Current-Max (IDM)
410 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF3610STRLPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 103A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
    VS

Alternate Parts for IRF3610STRLPBF

This table gives cross-reference parts and alternative options found for IRF3610STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3610STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SQM100N10-10_GE3 Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies IRF3610STRLPBF vs SQM100N10-10_GE3
STB120NF10T4 N-channel 100 V, 9 mOhm typ., 110 A STripFET II Power MOSFET in D2PAK package STMicroelectronics IRF3610STRLPBF vs STB120NF10T4
Part Number Description Manufacturer Compare
STB120NF10T4 N-channel 100 V, 9 mOhm typ., 110 A STripFET II Power MOSFET in D2PAK package STMicroelectronics IRF3610STRLPBF vs STB120NF10T4
SQM100N10-10_GE3 Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies IRF3610STRLPBF vs SQM100N10-10_GE3

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