There are no models available for this part yet.
Overview of SSI7N60BTU by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
Smart Cities
Agriculture Technology
Medical Imaging
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Price & Stock for SSI7N60BTU by Fairchild Semiconductor Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
2156-SSI7N60BTU-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 964 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
964 In Stock |
|
$0.3900 | Buy Now | |
| Rochester Electronics | 7A, 600V, 1.2ohm, N-Channel Power MOSFET, TO-262AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 964 |
|
$0.3384 / $0.3981 | Buy Now |
CAD Models for SSI7N60BTU by Fairchild Semiconductor Corporation
Part Data Attributes for SSI7N60BTU by Fairchild Semiconductor Corporation
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
Part Package Code
|
TO-262AA
|
|
Package Description
|
I2PAK-3
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Avalanche Energy Rating (Eas)
|
420 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
600 V
|
|
Drain Current-Max (ID)
|
7 A
|
|
Drain-source On Resistance-Max
|
1.2 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-262AA
|
|
JESD-30 Code
|
R-PSIP-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
147 W
|
|
Pulsed Drain Current-Max (IDM)
|
28 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for SSI7N60BTU
This table gives cross-reference parts and alternative options found for SSI7N60BTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSI7N60BTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK2777(2-10S1B) | TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | SSI7N60BTU vs 2SK2777(2-10S1B) |
| IRFSL9N60ATRL | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | SSI7N60BTU vs IRFSL9N60ATRL |
| IRF840LCLPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | SSI7N60BTU vs IRF840LCLPBF |
| 2SK3930-01L | Power Field-Effect Transistor, 11A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN | Fuji Electric Co Ltd | SSI7N60BTU vs 2SK3930-01L |
| FQI2N60 | Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | SSI7N60BTU vs FQI2N60 |
| IRFSL11N50A | Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | SSI7N60BTU vs IRFSL11N50A |
| IRFSL9N60APBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN | Vishay Siliconix | SSI7N60BTU vs IRFSL9N60APBF |
| IRF830ALPBF | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | Vishay Siliconix | SSI7N60BTU vs IRF830ALPBF |
| FQI12N60TU | Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | SSI7N60BTU vs FQI12N60TU |
| 2SK3312(2-10S1B) | TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | SSI7N60BTU vs 2SK3312(2-10S1B) |