Part Details for SSM6J501NU,LF(T by Toshiba America Electronic Components
Overview of SSM6J501NU,LF(T by Toshiba America Electronic Components
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SSM6J501NU,LF(T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09AK7986
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Newark | Mosfet, P-Ch, 20V, 10A, Sot-1220, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Toshiba SSM6J501NU, LF(T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 10534 |
|
$0.0900 | Buy Now |
DISTI #
82724497
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Verical | Trans MOSFET P-CH 20V 10A 6-Pin UDFN EP T/R RoHS: Compliant Min Qty: 80 Package Multiple: 1 Date Code: 2413 | Americas - 2981 |
|
$0.3063 / $0.3925 | Buy Now |
DISTI #
SSM6J501NU,LF(T
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Avnet Asia | Trans MOSFET P-CH 20V 10A 6-Pin UDFN (Alt: SSM6J501NU,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
C1S751200999644
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 2981 |
|
$0.2450 / $0.4270 | Buy Now |
DISTI #
SSM6J501NU,LF(T
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EBV Elektronik | Trans MOSFET P-CH 20V 10A 6-Pin UDFN (Alt: SSM6J501NU,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SSM6J501NU,LF(T
SSM6J501NU,LF(T CAD Models
SSM6J501NU,LF(T Part Data Attributes
|
SSM6J501NU,LF(T
Toshiba America Electronic Components
Buy Now
Datasheet
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SSM6J501NU,LF(T
Toshiba America Electronic Components
Small Signal Field-Effect Transistor
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.0265 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 280 pF | |
JESD-30 Code | S-PDSO-N6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |