Part Details for STAC2933 by STMicroelectronics
Results Overview of STAC2933 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
STAC2933 Information
STAC2933 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STAC2933
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
497-13572-ND
|
DigiKey | RF MOSFET 50V STAC177B Min Qty: 1 Container: Box |
0 Box |
|
$81.2500 / $98.5600 | Buy Now |
|
DISTI #
STAC2933
|
Avnet Americas | Transistor RF FET N-CH 130V 40A 30MHz 5-Pin STAC177B Tray - Boxed Product (Development Kits) (Alt: STAC2933) COO: Morocco RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Box | 0 |
|
RFQ |
STAC2933 Part Data Attributes
|
|
STAC2933
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STAC2933
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 130 V | |
| Drain Current-Max (ID) | 40 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 29 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-CDFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | Ceramic, Metal-Sealed Cofired | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 795 W | |
| Surface Mount | No | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |