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Part Details for STB28N60M2 by STMicroelectronics
Results Overview of STB28N60M2 by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STB28N60M2 Information
STB28N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB28N60M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STB28N60M2
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Avnet Americas | - Tape and Reel (Alt: STB28N60M2) COO: Singapore RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.8000 / $0.9143 | Buy Now |
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DISTI #
STB28N60M2
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Avnet Americas | - Tape and Reel (Alt: STB28N60M2) COO: Singapore RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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STMicroelectronics | N-channel 600 V, 135 mOhm typ., 22 A MDmesh M2 Power MOSFETs in a D2PAK package COO: Singapore RoHS: Compliant Min Qty: 1 | 1958 |
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$0.9600 / $2.4800 | Buy Now |
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DISTI #
STB28N60M2-STM-0
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TME | Transistor: N-MOSFET, 600V, 22A, 170W, D2PAK,TO263, SMT Min Qty: 1000 | 2000 |
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$1.0548 | Buy Now |
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DISTI #
STB28N60M2
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Avnet Silica | (Alt: STB28N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | Silica - 3000 |
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Buy Now | |
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Chip Stock | N-channel600V,0.135Ohmtyp.,22AMDmeshM2PowerMOSFETsinD2PAKpackage | 21575 |
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RFQ | |
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DISTI #
STB28N60M2
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EBV Elektronik | (Alt: STB28N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 600V 22A 150m10V11A 170W 4V 1 N-Channel D2PAK Single FETs MOSFETs RoHS | 8 |
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$2.5973 / $2.7430 | Buy Now |
Part Details for STB28N60M2
STB28N60M2 CAD Models
STB28N60M2 Part Data Attributes
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STB28N60M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB28N60M2
STMicroelectronics
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 350 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
STB28N60M2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STB28N60M2 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The recommended gate drive voltage for the STB28N60M2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the STB28N60M2 from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.
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The maximum allowable current for the STB28N60M2 is 28A, with a maximum pulsed current of 56A.