Findchips Blog
Transistors / Power Field-Effect Transistors / STB34N65M5
Datasheets
STB34N65M5 by: STMicroelectronics

Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Details for STB34N65M5 by STMicroelectronics

Results Overview of STB34N65M5 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

STB34N65M5 Information

STB34N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB34N65M5

Part # Distributor Description Stock Price Buy
DISTI # 61AC2085
Newark Mosfet, N-Ch, 650V, 28A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:28A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.09Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STB34N65M5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1762
  • 1 $5.2600
$5.2600 Buy Now
DISTI # 497-13085-1-ND
DigiKey MOSFET N-CH 650V 28A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 600
In Stock
  • 1 $6.7000
  • 10 $4.5110
  • 100 $3.3137
  • 1,000 $2.7073
$2.7073 / $6.7000 Buy Now
DISTI # STB34N65M5
Avnet Americas - Tape and Reel (Alt: STB34N65M5) COO: China RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tape & Reel 1000
  • 1,000 $2.8877
  • 2,000 $2.8311
  • 4,000 $2.7910
  • 6,000 $2.7520
  • 8,000 $2.7073
$2.7073 / $2.8877 Buy Now
DISTI # STB34N65M5
Avnet Americas - Tape and Reel (Alt: STB34N65M5) COO: China RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tape & Reel 1000
  • 1,000 $2.8877
  • 2,000 $2.8311
  • 4,000 $2.7910
  • 6,000 $2.7520
  • 8,000 $2.7073
$2.7073 / $2.8877 Buy Now
DISTI # 511-STB34N65M5
Mouser Electronics MOSFETs N-Ch 650V 0.098 Ohm 29 A MDmesh M5 RoHS: Compliant 0
  • 1,000 $2.7000
$2.7000 Order Now
Future Electronics N-Channel 650 V 0.11 Ohm Surface Mount MDmesh™ V Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks Container: Reel 0
Reel
  • 1,000 $3.1400
  • 2,000 $3.1000
$3.1000 / $3.1400 Buy Now
DISTI # STB34N65M5
Avnet Silica (Alt: STB34N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Silica - 56000
Buy Now
Chip Stock N-channel650V,0.09Ohmtyp.,28AMDmeshM5PowerMOSFETinD2PAKpackage 141
RFQ
DISTI # STB34N65M5
EBV Elektronik (Alt: STB34N65M5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days EBV - 8000
Buy Now

Part Details for STB34N65M5

STB34N65M5 Part Data Attributes

Parametric Data
STB34N65M5 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB34N65M5 STMicroelectronics Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Rohs Code Yes
Part Life Cycle Code Active
Package Description To-263, D2pak-3/2
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Avalanche Energy Rating (Eas) 510 Mj
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-Channel
Pulsed Drain Current-Max (IDM) 112 A
Surface Mount Yes
Terminal Finish Matte Tin (Sn) - Annealed
Terminal Form Gull Wing
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for STB34N65M5

This table gives cross-reference parts and alternative options found for STB34N65M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB34N65M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPW60R099P7XKSA1 Infineon Technologies AG $2.3354 Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 STB34N65M5 vs IPW60R099P7XKSA1
SIHG33N60E-GE3 Vishay Intertechnologies $5.3089 Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 STB34N65M5 vs SIHG33N60E-GE3
IPW60R099CS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, TO-247, 3 PIN STB34N65M5 vs IPW60R099CS
TK28N65W5,S1F Toshiba America Electronic Components Check for Price Power Field-Effect Transistor STB34N65M5 vs TK28N65W5,S1F
SIHG33N65EF-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 31.6A I(D), 650V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC STB34N65M5 vs SIHG33N65EF-GE3
IPB65R110CFDA Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB STB34N65M5 vs IPB65R110CFDA
IPB65R110CFD7 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 22A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB STB34N65M5 vs IPB65R110CFD7
TK31V60X,LQ Toshiba America Electronic Components Check for Price 30.8A, 600V, 0.098ohm, N-CHANNEL, Si, POWER, MOSFET STB34N65M5 vs TK31V60X,LQ
IPP60R099CPAAKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN STB34N65M5 vs IPP60R099CPAAKSA1
IPI60R099CPXKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA STB34N65M5 vs IPI60R099CPXKSA1
equivalents icon

STB34N65M5 Related Parts

STB34N65M5 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STB34N65M5 is -40°C to 150°C.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Consult the datasheet for specific biasing recommendations.

  • The maximum current rating for the STB34N65M5 is 34A.

  • Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding a current sense resistor and overcurrent protection circuit to prevent excessive current.

  • Use a multi-layer PCB with a solid ground plane, and place the STB34N65M5 near the power source. Keep the drain and source pins as close as possible to minimize inductance.

Share by Email

Something went wrong!
Please enter a valid e-mail address
Email sent!
Recipient Email:
Add a recipient
Hello!

We are passing along some cool findings on Findchips sent to you from .

The data is for STB34N65M5 by STMicroelectronics.
They’ve also added a data comparison to this page with by .

Click on the link below to check it out on Findchips.com.

Update Alert Settings for: STB34N65M5 by STMicroelectronics

Select Manufacturer
Which Manufacturer of STB34N65M5 would you like to use for your alert(s)?
Inventory Alert
  • Please alert me when STB34N65M5 inventory levels are or equal to a quantity of from one of my selected distributors.
  • Also alert me for STB34N65M5 alternates
    An alert is already set for the following part(s): . Any existing alert will be overwritten and set as a new alert.
No pricing information is available at this time
Pricing Alert
  • Please alert me when the single part price for STB34N65M5 to
    $
    for at least parts from one of my selected distributors.
    Your Pricing Alert is set to expire on .
    Set this alert to expire in Update this alert to expire · Expired on
  • Also alert me for STB34N65M5 alternates
    An alert is already set for the following part(s): . Any existing alert will be overwritten and set as a new alert.

Your part alert has been saved!

Alerts are triggered based off of individual distributors that you choose. Select your distributor(s) below.

Your part alert has been saved!

Register
Password Guidelines

Is at least 8 characters in length

Is at most 256 characters in length

Must include at least 3 of the following:

One lower-case character (a-z)

One upper-case character (A-Z)

One numeric character (0-9)

One special character (!#$%^&*)

Alert is successfully saved for STB34N65M5.
Looks like you've reached your alert limit!  Please delete some alerts or contact us if you need help.

Compare STB34N65M5 by STMicroelectronics

Select a part to compare:
Part Number Manufacturer Description
No result found.
Something went wrong!
Or search for a different part: