Part Details for STB60NH02LT4 by STMicroelectronics
Results Overview of STB60NH02LT4 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STB60NH02LT4 Information
STB60NH02LT4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB60NH02LT4
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Discontinued | 3235 |
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RFQ |
Part Details for STB60NH02LT4
STB60NH02LT4 CAD Models
STB60NH02LT4 Part Data Attributes
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STB60NH02LT4
STMicroelectronics
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Datasheet
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STB60NH02LT4
STMicroelectronics
Power Field-Effect Transistor, 60A I(D), 24V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | D2PAK | |
| Package Description | To-263, D2pak-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 280 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 24 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STB60NH02LT4
This table gives cross-reference parts and alternative options found for STB60NH02LT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB60NH02LT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP40NF03L | STMicroelectronics | $0.7435 | Power Field-Effect Transistor, 40A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STB60NH02LT4 vs STP40NF03L |
| STW7NK90Z | STMicroelectronics | $1.4575 | Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STB60NH02LT4 vs STW7NK90Z |
| APT50M75LLLG | Microchip Technology Inc | $21.2335 | MOSFET MOS 7 500 V 75 mOhm TO-264 | STB60NH02LT4 vs APT50M75LLLG |
| SPD25N06S2-40 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | STB60NH02LT4 vs SPD25N06S2-40 |
| FQB60N03L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 51A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB60NH02LT4 vs FQB60N03L |
| PHB42N03T | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 42A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STB60NH02LT4 vs PHB42N03T |
| FQP90N08 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 71A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STB60NH02LT4 vs FQP90N08 |
| IXFK80N20Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 80A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264 | STB60NH02LT4 vs IXFK80N20Q |
| STD5NE10-1 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | STB60NH02LT4 vs STD5NE10-1 |
| IPD075N03LG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 50A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | STB60NH02LT4 vs IPD075N03LG |
STB60NH02LT4 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the STB60NH02LT4 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
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To calculate the power dissipation of the STB60NH02LT4, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance from junction to ambient (RthJA). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (RthJA * Tj), where Vds is the drain-source voltage, Ids is the drain-source current, and Tj is the junction temperature.
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To minimize thermal resistance, it's recommended to use a PCB layout that provides a large copper area for heat dissipation. The copper area should be connected to a solid ground plane, and the device should be placed near a heat sink or a metal plate. Additionally, the PCB should have multiple vias to connect the top and bottom layers, which helps to reduce thermal resistance.
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Yes, the STB60NH02LT4 is suitable for high-frequency switching applications due to its low gate charge, low output capacitance, and fast switching times. However, it's essential to consider the device's maximum switching frequency, which is typically limited by the gate driver's capabilities and the PCB layout. Additionally, you should ensure that the device is properly snubbed to prevent ringing and oscillations.
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To protect the STB60NH02LT4 from electrostatic discharge (ESD), it's recommended to follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and bags, as well as ensuring that the device is stored in a dry, clean environment. Additionally, you should consider adding ESD protection devices, such as TVS diodes or ESD arrays, to the PCB design.