Datasheets
STB85NF55T4 by: STMicroelectronics

Overview of: STB85NF55T4 by STMicroelectronics

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Price & Stock for: STB85NF55T4

Distributor Stock Package QTY Break / Prices
View this part on Digi-Key
0 Digi-Reel
  • 1 $3.0600
  • 10 $2.7480
  • 100 $2.2518
  • 500 $1.9169
View this part on Digi-Key
0 Reel
  • 1,000 $1.8372
View this part on Digi-Key
0 Cut Tape
  • 1 $3.0600
  • 10 $2.7480
  • 100 $2.2518
  • 500 $1.9169
View this part on Avnet Americas
0 Reel
  • 1,000 $1.5590
  • 2,000 $1.5275
  • 4,000 $1.4960
  • 6,000 $1.4645
  • 8,000 $1.4330
  • 10,000 $1.4015
  • 100,000 $1.3700
View this part on Newark
0 TAPE & REEL FULL
  • 1,000 $1.5400
View this part on Bristol Electronics
2,848
View this part on ComS.I.T. USA
2,000
View this part on Avnet Europe
0
  • 1,000 $3.7687
  • 2,000 $3.4956
  • 4,000 $2.9494
  • 6,000 $2.6763
  • 8,000 $2.4251
  • 10,000 $2.1301
  • 100,000 $1.9991
View this part on Farnell
0 Each
  • 1 $1.5235
  • 10 $0.8198
  • 100 $0.8028

Part Details for: STB85NF55T4

CAD Models

Part Data Attributes

STB85NF55T4 STMicroelectronics

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STB85NF55T4 STMicroelectronics Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET II Power MOSFET in D2PAK package

Source Content uid STB85NF55T4
Part Life Cycle Code Active
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Avalanche Energy Rating (Eas) 980 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (Abs) (ID) 80 A
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for: STB85NF55T4

Part Number Description Manufacturer Compare
STB85NF55LT4 Transistors N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in D2PAK package STMicroelectronics STB85NF55T4 vs STB85NF55LT4
Part Number Description Manufacturer Compare
SPI80N06S08AKSA1 Transistors Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG STB85NF55T4 vs SPI80N06S08AKSA1
STB85NF55LT4 Transistors N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in D2PAK package STMicroelectronics STB85NF55T4 vs STB85NF55LT4
IPP80N06S2L06AKSA1 Transistors Power Field-Effect Transistor, 80A I(D), 55V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STB85NF55T4 vs IPP80N06S2L06AKSA1
SPI80N06S-08 Transistors Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG STB85NF55T4 vs SPI80N06S-08
IPB80N06S2L-06 Transistors Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STB85NF55T4 vs IPB80N06S2L-06
SP0000-82518 Transistors Power Field-Effect Transistor Infineon Technologies AG STB85NF55T4 vs SP0000-82518
IPP80N06S2L-06 Transistors 80A, 55V, 0.0081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC STB85NF55T4 vs IPP80N06S2L-06
SPB80N06S08ATMA1 Transistors Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STB85NF55T4 vs SPB80N06S08ATMA1
IPB80N06S2L06ATMA1 Transistors Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STB85NF55T4 vs IPB80N06S2L06ATMA1
IPP80N06S209AKSA1 Transistors Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STB85NF55T4 vs IPP80N06S209AKSA1

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