Part Details for STB9NB50-1 by STMicroelectronics
Overview of STB9NB50-1 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for STB9NB50-1
STB9NB50-1 CAD Models
STB9NB50-1 Part Data Attributes
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STB9NB50-1
STMicroelectronics
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Datasheet
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STB9NB50-1
STMicroelectronics
8.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-262AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8.6 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 34.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB9NB50-1
This table gives cross-reference parts and alternative options found for STB9NB50-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB9NB50-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK1541(S)TL | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET | Renesas Electronics Corporation | STB9NB50-1 vs 2SK1541(S)TL |
| 2SK1864 | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | STB9NB50-1 vs 2SK1864 |
| 2SK1315(S)TL | 8A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET | Renesas Electronics Corporation | STB9NB50-1 vs 2SK1315(S)TL |
| FS10VS-10 | Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Powerex Power Semiconductors | STB9NB50-1 vs FS10VS-10 |
| 2SK1540(S)TL | Power Field-Effect Transistor, 7A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Hitachi Ltd | STB9NB50-1 vs 2SK1540(S)TL |
| 2SK1540(S)TR | 7A, 450V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET | Renesas Electronics Corporation | STB9NB50-1 vs 2SK1540(S)TR |
| IRF840ASTRRPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | STB9NB50-1 vs IRF840ASTRRPBF |
| IRF840STRLPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | STB9NB50-1 vs IRF840STRLPBF |
| 2SK1540(S) | Power Field-Effect Transistor, 7A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3/2 | Hitachi Ltd | STB9NB50-1 vs 2SK1540(S) |
| 2SK1540S | 7A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | STB9NB50-1 vs 2SK1540S |