Part Details for STD10LN80K5 by STMicroelectronics
Results Overview of STD10LN80K5 by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STD10LN80K5 Information
STD10LN80K5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD10LN80K5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47AK6924
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Newark | Mosfet, N-Ch, 800V, 8A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Qualification:-Rohs Compliant: Yes |Stmicroelectronics STD10LN80K5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1976 |
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$1.9900 / $4.2200 | Buy Now |
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DISTI #
497-STD10LN80K5CT-ND
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DigiKey | MOSFET N-CHANNEL 800V 8A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4380 In Stock |
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$1.2127 / $3.6900 | Buy Now |
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DISTI #
STD10LN80K5
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Avnet Americas | - Bulk (Alt: STD10LN80K5) COO: Italy RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Bulk | 0 |
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$1.2127 / $1.3860 | Buy Now |
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DISTI #
511-STD10LN80K5
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Mouser Electronics | MOSFETs N-channel 800 V, 550 mOhm typ., 8 A MDmesh K5 Power MOSFET in a DPAK package RoHS: Compliant | 2249 |
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$1.2400 / $3.6900 | Buy Now |
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STMicroelectronics | N-channel 800 V, 550 mOhm typ., 8 A MDmesh K5 Power MOSFET in a DPAK package COO: Italy RoHS: Compliant Min Qty: 1 | 2249 |
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$1.4600 / $3.6200 | Buy Now |
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DISTI #
STD10LN80K5
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Avnet Silica | (Alt: STD10LN80K5) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days | Silica - 2500 |
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Buy Now | |
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DISTI #
STD10LN80K5
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EBV Elektronik | (Alt: STD10LN80K5) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for STD10LN80K5
STD10LN80K5 CAD Models
STD10LN80K5 Part Data Attributes
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STD10LN80K5
STMicroelectronics
Buy Now
Datasheet
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STD10LN80K5
STMicroelectronics
Power Field-Effect Transistor, 8A I(D), 800V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Dpak-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 240 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.63 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 0.25 Pf | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STD10LN80K5 Frequently Asked Questions (FAQ)
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The STD10LN80K5 can operate up to 80 MHz, but the maximum frequency depends on the specific application and system design.
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To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and consider using a voltage regulator or voltage reference to maintain a stable voltage supply.
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The maximum power dissipation of the STD10LN80K5 is 1.4 W, but this can vary depending on the specific application and operating conditions. Be sure to follow proper thermal management practices to prevent overheating.
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The STD10LN80K5 is rated for operation up to 150°C, but prolonged exposure to high temperatures can affect its performance and lifespan. Consider using thermal management techniques and ensuring good airflow to prevent overheating.
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To protect the STD10LN80K5 from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider using ESD protection devices or circuits in your design.