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Part Details for STD10P6F6 by STMicroelectronics
Overview of STD10P6F6 by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for STD10P6F6
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
98Y2467
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Newark | Mosfet, P-Ch, -60V, -10A, To-252-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD10P6F6 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 4756 |
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$0.5440 / $1.1200 | Buy Now |
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DISTI #
86AK6458
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Newark | Mosfet, P-Ch, 60V, 10A, To-252 Rohs Compliant: Yes |Stmicroelectronics STD10P6F6 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3940 / $0.4240 | Buy Now |
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DISTI #
38AH9210
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Newark | P-Channel Stripfet -20 V To -500 V Rohs Compliant: Yes |Stmicroelectronics STD10P6F6 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3650 / $0.4740 | Buy Now |
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DISTI #
497-13424-1-ND
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DigiKey | MOSFET P CH 60V 10A DPAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5005 In Stock |
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$0.3610 / $0.9600 | Buy Now |
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DISTI #
STD10P6F6
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Avnet Americas | Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD10P6F6) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.4029 / $0.4202 | Buy Now |
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DISTI #
98Y2467
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Avnet Americas | Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 98Y2467) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 4756 Partner Stock |
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$0.7410 / $1.1200 | Buy Now |
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DISTI #
511-STD10P6F6
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Mouser Electronics | MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat RoHS: Compliant | 16008 |
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$0.3690 / $0.9600 | Buy Now |
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STMicroelectronics | P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package RoHS: Compliant Min Qty: 1 | 16008 |
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$0.5100 / $0.9400 | Buy Now |
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Future Electronics | P-Channel 60 V 160 mΩ 6.4 nC SMT STripFET™ VI DeepGATE™ Mosfet -TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 12500Reel |
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$0.3550 / $0.3800 | Buy Now |
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Future Electronics | P-Channel 60 V 160 mΩ 6.4 nC SMT STripFET™ VI DeepGATE™ Mosfet -TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3550 / $0.3800 | Buy Now |
Part Details for STD10P6F6
STD10P6F6 CAD Models
STD10P6F6 Part Data Attributes
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STD10P6F6
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD10P6F6
STMicroelectronics
P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.116 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD10P6F6
This table gives cross-reference parts and alternative options found for STD10P6F6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD10P6F6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD7P06 | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD10P6F6 vs FQD7P06 |
| SFR9024 | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-2 | Fairchild Semiconductor Corporation | STD10P6F6 vs SFR9024 |
| SFR9024TF | 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | STD10P6F6 vs SFR9024TF |
| SFW9Z14TM | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STD10P6F6 vs SFW9Z14TM |
| SPD08P05 | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Infineon Technologies AG | STD10P6F6 vs SPD08P05 |
| SFR9024TF | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | STD10P6F6 vs SFR9024TF |
| RFD8P06ESM9A | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | Fairchild Semiconductor Corporation | STD10P6F6 vs RFD8P06ESM9A |
| RFD8P06ESM | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | STD10P6F6 vs RFD8P06ESM |
| FQD7P06TM | Power MOSFET, P-Channel, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK, 2500-REEL | onsemi | STD10P6F6 vs FQD7P06TM |
| SFW9Z24 | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | STD10P6F6 vs SFW9Z24 |