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Power Field-Effect Transistor, 13A I(D), 250V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD16NF25 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
07AH6957
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Newark | Mosfet, N-Ch, 250V, 14A, 150Deg C, 85W, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD16NF25 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 473 |
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$1.1500 / $2.7700 | Buy Now |
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DISTI #
86AK6465
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Newark | Mosfet, N-Ch, 250V, 14A, To-252 Rohs Compliant: Yes |Stmicroelectronics STD16NF25 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Tape & Reel | 0 |
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$1.0300 / $1.0500 | Buy Now |
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DISTI #
497-7959-1-ND
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DigiKey | MOSFET N-CH 250V 14A DPAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
4775 In Stock |
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$0.7011 / $2.4700 | Buy Now |
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DISTI #
07AH6957
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Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 07AH6957) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 473 Partner Stock |
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$1.1600 / $2.7600 | Buy Now |
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DISTI #
STD16NF25
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Avnet Americas | - Tape and Reel (Alt: STD16NF25) COO: China RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Tape & Reel | 0 |
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$0.6677 / $0.7100 | Buy Now |
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DISTI #
511-STD16NF25
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Mouser Electronics | MOSFETs N-Channel 250V Pwr Mosfet RoHS: Compliant | 1944 |
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$0.7010 / $2.4700 | Buy Now |
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STMicroelectronics | N-channel 250 V, 195 mOhm, 14 A STripFET II Power MOSFET in DPAK package COO: Singapore RoHS: Compliant Min Qty: 1 | 1944 |
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$0.8500 / $2.4200 | Buy Now |
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Future Electronics | N-Channel 250 V 0.235 Ohm Surface Mount STripFET II Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks Container: Reel | 0Reel |
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$0.7450 / $0.7700 | Buy Now |
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DISTI #
85918564
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Verical | Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Date Code: 2440 | Americas - 2500 |
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$0.6453 / $0.6590 | Buy Now |
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DISTI #
STD16NF25
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IBS Electronics | N-CHANNEL 250 V 0.195 OHM 14 A STRIPFET(TM) II POWER MOSFET IN DPAK PACKAGE Min Qty: 1 Package Multiple: 1 | 0 |
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$1.0430 / $1.0780 | Buy Now |
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STD16NF25
STMicroelectronics
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Datasheet
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STD16NF25
STMicroelectronics
Power Field-Effect Transistor, 13A I(D), 250V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Rohs Compliant, Dpak-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 100 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.235 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STD16NF25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD16NF25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.8939 | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD16NF25 vs STP4NK60Z |
| NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | STD16NF25 vs NDP706A |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD16NF25 vs IRFS620 |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | STD16NF25 vs IPD90N06S306ATMA1 |
| FQA30N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STD16NF25 vs FQA30N40 |
| SSS7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STD16NF25 vs SSS7N60B |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD16NF25 vs FQA17N40 |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD16NF25 vs FDP6035L |
| FQP5N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD16NF25 vs FQP5N40 |
| SPP04N60C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD16NF25 vs SPP04N60C3 |
The maximum operating frequency of the STD16NF25 is 250 MHz.
Yes, the STD16NF25 is 5V tolerant, meaning it can handle input voltages up to 5V even though its recommended operating voltage is 3.3V.
The propagation delay of the STD16NF25 is typically around 3.5 ns at 25°C and 3.3V supply voltage.
Yes, the STD16NF25 can be used for 3.3V to 5V level translation, but it's essential to ensure that the output voltage does not exceed the maximum rating of 5.5V.
Yes, the STD16NF25 is available in a lead-free package, making it suitable for RoHS-compliant designs.