Part Details for STD17N06-1 by STMicroelectronics
Overview of STD17N06-1 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Energy and Power Systems
Medical Imaging
Entertainment and Gaming
Robotics and Drones
Part Details for STD17N06-1
STD17N06-1 CAD Models
STD17N06-1 Part Data Attributes
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STD17N06-1
STMicroelectronics
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Datasheet
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STD17N06-1
STMicroelectronics
17A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-251AA | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 55 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STD17N06-1
This table gives cross-reference parts and alternative options found for STD17N06-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD17N06-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | STD17N06-1 vs NDB706AL |
IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STD17N06-1 vs IPB80N06S2LH5ATMA1 |
IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | STD17N06-1 vs IXFH12N100F |
F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | STD17N06-1 vs F10F6N |
STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | STD17N06-1 vs STP9NK65Z |
STD5NE10T4 | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | STD17N06-1 vs STD5NE10T4 |
NDB705BEL | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | STD17N06-1 vs NDB705BEL |
IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | STD17N06-1 vs IXFH30N40Q |
SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STD17N06-1 vs SPB80N06S2-07 |
SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD17N06-1 vs SPP80N03S2L-05 |