Part Details for STD50NH02L-1 by STMicroelectronics
Results Overview of STD50NH02L-1 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STD50NH02L-1 Information
STD50NH02L-1 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD50NH02L-1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 90 |
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$1.2500 / $1.9200 | Buy Now |
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Vyrian | Discontinued | 4758 |
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RFQ |
Part Details for STD50NH02L-1
STD50NH02L-1 CAD Models
STD50NH02L-1 Part Data Attributes
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STD50NH02L-1
STMicroelectronics
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Datasheet
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STD50NH02L-1
STMicroelectronics
Power Field-Effect Transistor, 50A I(D), 24V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-251 | |
| Package Description | Rohs Compliant, Ipak-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Low Threshold | |
| Avalanche Energy Rating (Eas) | 280 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 24 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |