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Part Details for STGFW20V60DF by STMicroelectronics
Results Overview of STGFW20V60DF by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
STGFW20V60DF Information
STGFW20V60DF by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STGFW20V60DF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
V99:2348_18459434
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Arrow Electronics | Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube COO: South Korea RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 1842 | Americas - 39 |
|
$1.1290 | Buy Now |
|
|
STMicroelectronics | Trench gate field-stop IGBT, V series 600 V, 20 A very high speed COO: South Korea RoHS: Compliant Min Qty: 1 | 167 |
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$1.8900 / $3.7000 | Buy Now |
|
DISTI #
31355319
|
Verical | Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube RoHS: Exempt Min Qty: 5 Package Multiple: 1 Date Code: 1842 | Americas - 39 |
|
$1.1290 | Buy Now |
|
DISTI #
V99:2348_18459434
|
Arrow Electronics | Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube COO: South Korea RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 1842 | Americas - 39 |
|
$1.1290 | Buy Now |
|
DISTI #
31355319
|
Verical | Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube COO: South Korea RoHS: Exempt Min Qty: 5 Package Multiple: 1 Date Code: 1842 | Americas - 39 |
|
$1.1290 | Buy Now |
|
DISTI #
V99:2348_18459434
|
Arrow Electronics | Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube COO: South Korea RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 1842 | Americas - 39 |
|
$1.1290 | Buy Now |
|
DISTI #
31355319
|
Verical | Trans IGBT Chip N-CH 600V 40A 52W 3-Pin(3+Tab) TO-3PF Tube COO: South Korea RoHS: Exempt Min Qty: 5 Package Multiple: 1 Date Code: 1842 | Americas - 39 |
|
$1.1290 | Buy Now |
|
|
LCSC | TO-3PF Single IGBTs RoHS | 270 |
|
$1.3865 / $1.8138 | Buy Now |
Part Details for STGFW20V60DF
STGFW20V60DF CAD Models
STGFW20V60DF Part Data Attributes
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STGFW20V60DF
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGFW20V60DF
STMicroelectronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | To-3pf, 3 Pin | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Case Connection | Isolated | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | Single With Built-In Diode | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 86.7 W | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Power Control | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Nom (toff) | 173 Ns | |
| Turn-on Time-Nom (ton) | 49 Ns | |
| VCEsat-Max | 2.2 V |
STGFW20V60DF Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the STGFW20V60DF is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
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To calculate the power dissipation of the STGFW20V60DF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Rth(j-a) * (Tj - Ta)), where Vds is the voltage drop, Ids is the current, Rth(j-a) is the thermal resistance, Tj is the junction temperature, and Ta is the ambient temperature.
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The recommended gate resistor value for the STGFW20V60DF depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note AN5042 from STMicroelectronics for more detailed guidance on gate resistor selection.
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Yes, the STGFW20V60DF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge, to ensure optimal performance and minimize losses.
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To ensure the reliability of the STGFW20V60DF in a high-temperature environment, it's essential to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and keeping the junction temperature below 150°C. Additionally, it's recommended to follow the recommended operating conditions and derating guidelines specified in the datasheet.