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STGFW20V60F by:
STMicroelectronics

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel

Part Details for STGFW20V60F by STMicroelectronics

Results Overview of STGFW20V60F by STMicroelectronics

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Applications Industrial Automation Electronic Manufacturing

STGFW20V60F Information

STGFW20V60F by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STGFW20V60F

Part # Distributor Description Stock Price Buy
DISTI # 497-13954-5-ND
DigiKey IGBT TRENCH FS 600V 40A TO-3PF Min Qty: 1 Lead time: 20 Weeks Container: Tube 281
In Stock
  • 1 $2.8400
  • 30 $1.5390
  • 120 $1.2523
$1.2523 / $2.8400 Buy Now
STMicroelectronics Trench gate field-stop IGBT, V series 600 V, 20 A very high speed COO: South Korea RoHS: Compliant Min Qty: 1 443
  • 1 $2.7800
  • 10 $1.5100
  • 100 $1.2400
$1.2400 / $2.7800 Buy Now
Bristol Electronics   Min Qty: 2 565
  • 2 $3.0054
  • 8 $2.2540
  • 24 $1.8784
  • 81 $1.1270
  • 268 $1.0519
$1.0519 / $3.0054 Buy Now
Quest Components   452
  • 1 $3.0054
  • 134 $1.4025
  • 358 $1.3023
$1.3023 / $3.0054 Buy Now
Quest Components   452
  • 1 $4.0038
  • 95 $2.4690
  • 406 $2.2021
$2.2021 / $4.0038 Buy Now

Part Details for STGFW20V60F

STGFW20V60F CAD Models

STGFW20V60F Part Data Attributes

STGFW20V60F STMicroelectronics
Buy Now Datasheet
Compare Parts:
STGFW20V60F STMicroelectronics Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
Rohs Code Yes
Part Life Cycle Code Obsolete
Part Package Code TO-3PF
Package Description Rohs Compliant, To-3pf, 3 Pin
Pin Count 2
Reach Compliance Code Not Compliant
ECCN Code EAR99
Case Connection Isolated
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 600 V
Configuration Single With Built-In Diode
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Polarity/Channel Type N-Channel
Surface Mount No
Terminal Finish Matte Tin
Terminal Form Through-Hole
Terminal Position Single
Transistor Application Power Control
Transistor Element Material Silicon
Turn-off Time-Nom (toff) 173 Ns
Turn-on Time-Nom (ton) 49 Ns
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STGFW20V60F Related Parts

STGFW20V60F Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) of the STGFW20V60F is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.

  • To calculate the power dissipation of the STGFW20V60F, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance (Rth) from junction to ambient (Rth(j-a)). The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Rth(j-a) * Tj), where Vds is the drain-source voltage, Ids is the drain-source current, and Tj is the junction temperature.

  • The recommended gate drive voltage for the STGFW20V60F is between 10V and 15V, with a maximum gate-source voltage (Vgs) of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide damage.

  • Yes, the STGFW20V60F is suitable for high-frequency switching applications up to 100 kHz. However, you need to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation. It's recommended to consult the datasheet and application notes for more information on high-frequency operation.

  • To protect the STGFW20V60F from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. It's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device, and a current sense resistor or a current limiter to prevent overcurrent conditions.

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