Datasheets
STGWA60H65DFB by: STMicroelectronics

Insulated Gate Bipolar Transistor

Part Details for STGWA60H65DFB by STMicroelectronics

Results Overview of STGWA60H65DFB by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STGWA60H65DFB Information

STGWA60H65DFB by STMicroelectronics is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STGWA60H65DFB

Part # Distributor Description Stock Price Buy
DISTI # 47AK6956
Newark Igbt, Single, 650V, 80A, To-247Ll, Continuous Collector Current:80A, Collector Emitter Saturation Voltage:1.6V, Power Dissipation:375W, Collector Emitter Voltage Max:650V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGWA60H65DFB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 260
  • 1 $5.5400
  • 10 $3.4900
  • 25 $3.2300
  • 60 $2.9600
  • 120 $2.7200
$2.7200 / $5.5400 Buy Now
DISTI # 497-STGWA60H65DFB-ND
DigiKey IGBT TRENCH FS 650V 80A TO-247-3 Min Qty: 1 Lead time: 14 Weeks Container: Tube 570
In Stock
  • 1 $4.6300
  • 30 $2.5730
  • 120 $2.1197
  • 510 $1.7872
  • 1,020 $1.6658
  • 2,010 $1.6500
$1.6500 / $4.6300 Buy Now
DISTI # STGWA60H65DFB
Avnet Americas Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGWA60H65DFB) COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 600 $1.8857
  • 1,200 $1.7838
  • 2,400 $1.7368
  • 4,800 $1.6923
  • 9,600 $1.6500
$1.6500 / $1.8857 Buy Now
DISTI # 47AK6956
Avnet Americas Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Bulk (Alt: 47AK6956) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $5.5300
  • 10 $4.8400
  • 25 $4.1600
  • 60 $3.4700
  • 120 $3.2500
  • 270 $3.0200
$3.0200 / $5.5300 Buy Now
DISTI # 511-STGWA60H65DFB
Mouser Electronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed RoHS: Compliant 547
  • 1 $4.6300
  • 10 $2.5800
  • 100 $2.1200
  • 600 $1.7900
  • 1,200 $1.6500
$1.6500 / $4.6300 Buy Now
DISTI # V36:1790_06560810
Arrow Electronics Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 14 Weeks Date Code: 2342 Americas - 9390
  • 600 $1.5400
$1.5400 Buy Now
STMicroelectronics Trench gate field-stop IGBT, HB series 650 V, 60 A high speed COO: China RoHS: Compliant Min Qty: 1 547
  • 1 $4.5400
  • 10 $2.5300
  • 100 $2.0800
$2.0800 / $4.5400 Buy Now
DISTI # 78403451
Verical Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 600 Package Multiple: 600 Date Code: 2342 Americas - 9000
  • 600 $1.5400
$1.5400 Buy Now
DISTI # V36:1790_06560810
Arrow Electronics Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 14 Weeks Date Code: 2342 Americas - 9390
  • 600 $1.5400
$1.5400 Buy Now
DISTI # 78403451
Verical Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 600 Date Code: 2342 Americas - 9000
  • 600 $1.5400
$1.5400 Buy Now
DISTI # STGWA60H65DFB
TME Transistor: IGBT, 650V, 60A, 375W, TO247-3 Min Qty: 1 0
  • 1 $4.6200
  • 3 $4.3600
  • 10 $3.7100
  • 30 $2.8700
  • 120 $2.6800
$2.6800 / $4.6200 RFQ
DISTI # V36:1790_06560810
Arrow Electronics Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 14 Weeks Date Code: 2342 Americas - 9390
  • 600 $1.5400
$1.5400 Buy Now
DISTI # 78403451
Verical Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-247 Tube COO: China RoHS: Compliant Min Qty: 600 Package Multiple: 600 Date Code: 2342 Americas - 9000
  • 600 $1.5400
$1.5400 Buy Now
DISTI # STGWA60H65DFB
Avnet Silica Trans IGBT Chip NCH 650V 80A 3Pin TO247 Tube (Alt: STGWA60H65DFB) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Silica - 600
Buy Now
DISTI # STGWA60H65DFB
EBV Elektronik Trans IGBT Chip NCH 650V 80A 3Pin TO247 Tube (Alt: STGWA60H65DFB) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube / IGBT BIPO 650V 60A TO247-3 36600
  • 21 $2.8540
  • 44 $2.6704
  • 68 $2.5780
  • 97 $2.3943
  • 126 $2.3019
  • 157 $2.2107
$2.2107 / $2.8540 Buy Now

Part Details for STGWA60H65DFB

STGWA60H65DFB CAD Models

STGWA60H65DFB Part Data Attributes

STGWA60H65DFB STMicroelectronics
Buy Now Datasheet
Compare Parts:
STGWA60H65DFB STMicroelectronics Insulated Gate Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Active
Reach Compliance Code Compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
JESD-609 Code e3
Terminal Finish Matte Tin (Sn) - Annealed
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STGWA60H65DFB Related Parts

STGWA60H65DFB Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the STGWA60H65DFB is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.

  • The recommended gate resistor value for the STGWA60H65DFB is between 10Ω and 20Ω. However, the optimal value may vary depending on the specific application and switching frequency.

  • Yes, the STGWA60H65DFB is suitable for high-reliability applications. It's built with a robust design and undergoes rigorous testing to ensure high reliability and long-term stability.

  • To protect the STGWA60H65DFB from overvoltage and overcurrent, use a voltage clamp or a surge protector, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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