There are no models available for this part yet.
Overview of STHV82 by STMicroelectronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 5 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for STHV82 by STMicroelectronics
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 20 |
|
RFQ | ||||
Quest Components | MOSFET Transistor, N-Channel, TO-218 | 234 |
|
$6.0000 / $15.0000 | Buy Now |
CAD Models for STHV82 by STMicroelectronics
Part Data Attributes for STHV82 by STMicroelectronics
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Avalanche Energy Rating (Eas)
|
320 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
800 V
|
Drain Current-Max (ID)
|
5.5 A
|
Drain-source On Resistance-Max
|
2 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
85 pF
|
JEDEC-95 Code
|
TO-218
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
150 W
|
Power Dissipation-Max (Abs)
|
150 W
|
Pulsed Drain Current-Max (IDM)
|
20 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-on Time-Max (ton)
|
170 ns
|
Alternate Parts for STHV82
This table gives cross-reference parts and alternative options found for STHV82. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STHV82, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFPE40PBF | Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN | International Rectifier | STHV82 vs IRFPE40PBF |
2SK955 | Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, 3 PIN | Fuji Electric Co Ltd | STHV82 vs 2SK955 |
STW7NA80 | 6.5A, 800V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | STHV82 vs STW7NA80 |
BUZ356 | Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | STHV82 vs BUZ356 |
BUZ356 | Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Infineon Technologies AG | STHV82 vs BUZ356 |