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| Manufacturer | Description | Price Range | Set Alert | Details |
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| Harris Semiconductor | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | $1.1000 / $6.0000 |
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| New Jersey Semiconductor Products Inc | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,40A I(D),TO-247 | $2.4000 / $6.0000 |
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| International Rectifier | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | $1.5000 / $8.1000 |
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| STMicroelectronics | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | $3.9240 / $5.8860 |
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| Vishay Siliconix | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | $3.0800 / $6.3000 |
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| Intel Corporation | INSTOCK |
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| Binder UK Ltd | INSTOCK |
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| Vishay Intertechnologies | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC |
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| Internet Systems Consortium Inc | $0.9951 / $1.6873 |
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| Vishay Huntington | Advanced Power MOSFET | MOSFET N-CH 100V 41A TO-247AC | $2.8251 / $4.2376 |
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| Rochester Electronics LLC | 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Texas Instruments | IRFP150 |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
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| Intersil Corporation | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
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| TT Electronics Resistors | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| IXYS Corporation | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| TT Electronics Power and Hybrid / Semelab Limited | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Samsung Semiconductor | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| FCI Semiconductor | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| General Electric Solid State | Transistor |
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| Littelfuse Inc | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| National Semiconductor Corporation | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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