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Power Field-Effect Transistor, 2A I(D), 100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STN2NF10 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
88K0266
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Newark | N Channel Mosfet, 100V, 2A, Sot-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:100V, On Resistance Rds(On):230Mohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, No. Of Pins:4 Rohs Compliant: Yes |Stmicroelectronics STN2NF10 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1257 |
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$0.3900 / $1.1300 | Buy Now |
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DISTI #
86AK6507
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Newark | Mosfet, N-Ch, 100V, 2A, Sot-223 Rohs Compliant: Yes |Stmicroelectronics STN2NF10 RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Tape & Reel | 0 |
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$0.4630 / $0.4700 | Buy Now |
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DISTI #
497-8023-1-ND
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DigiKey | MOSFET N-CH 100V 2.4A SOT-223 Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
8366 In Stock |
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$0.3829 / $1.5900 | Buy Now |
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DISTI #
STN2NF10
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Avnet Americas | - Tape and Reel (Alt: STN2NF10) COO: Singapore RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks, 0 Days Container: Tape & Reel | 12000 |
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$0.2828 / $0.2887 | Buy Now |
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DISTI #
STN2NF10
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Avnet Americas | - Tape and Reel (Alt: STN2NF10) COO: Singapore RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks, 0 Days Container: Tape & Reel | 12000 |
|
$0.2828 / $0.2887 | Buy Now |
|
DISTI #
88K0266
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Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 88K0266) COO: Singapore RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 1257 Partner Stock |
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$0.4100 / $1.1200 | Buy Now |
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DISTI #
88K0266
|
Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 88K0266) COO: Singapore RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 1257 Partner Stock |
|
$0.4100 / $1.1200 | Buy Now |
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DISTI #
511-STN2NF10
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Mouser Electronics | MOSFETs N-Ch 100 Volt 2 Amp RoHS: Compliant | 30947 |
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$0.3970 / $1.5800 | Buy Now |
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DISTI #
E02:0323_00026398
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Arrow Electronics | Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R COO: Singapore RoHS: Exempt Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks Date Code: 2531 | Europe - 28000 |
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$0.1631 / $0.3818 | Buy Now |
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DISTI #
V36:1790_06564680
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Arrow Electronics | Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R COO: China RoHS: Exempt Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks Date Code: 2510 | Americas - 20000 |
|
$0.1544 / $0.2945 | Buy Now |
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STN2NF10
STMicroelectronics
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Datasheet
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Compare Parts:
STN2NF10
STMicroelectronics
Power Field-Effect Transistor, 2A I(D), 100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT-223 | |
| Package Description | Sot-223, 4 Pin | |
| Pin Count | 4 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 300 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.26 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 210 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STN2NF10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STN2NF10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFL110TRPBF | Vishay Intertechnologies | $0.3579 | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | STN2NF10 vs IRFL110TRPBF |
| BSP373NH6327XTSA1 | Infineon Technologies AG | $0.4811 | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NF10 vs BSP373NH6327XTSA1 |
| IRFL110TRPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | STN2NF10 vs IRFL110TRPBF |
| SIHFL110TR-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | STN2NF10 vs SIHFL110TR-GE3 |
| IRLM120AS62Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NF10 vs IRLM120AS62Z |
| BSP372 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | STN2NF10 vs BSP372 |
| PMT200EN | NXP Semiconductors | Check for Price | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | STN2NF10 vs PMT200EN |
| IRLM120ATF | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NF10 vs IRLM120ATF |
| IRLM120A | onsemi | Check for Price | Power Field-Effect Transistor | STN2NF10 vs IRLM120A |
| 2SK2742 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7H1B, 3 PIN, FET General Purpose Power | STN2NF10 vs 2SK2742 |
The maximum operating temperature range for the STN2NF10 is -40°C to 150°C.
To ensure reliability, follow the recommended storage and handling procedures, and ensure that the device is operated within the specified voltage and temperature ranges. Additionally, consider using a thermally conductive material to dissipate heat.
To minimize EMI, use a multi-layer PCB with a solid ground plane, and keep the device as close to the PCB as possible. Use short, direct traces for the input and output pins, and avoid routing signals near the device's power pins.
The STN2NF10 is rated for a maximum voltage of 100V. If your application requires a higher voltage, consider using a different device or adding external voltage regulation.
To troubleshoot issues, start by verifying the device's pinout and ensuring that the input and output pins are properly connected. Check the device's voltage and current ratings, and ensure that the PCB layout is correct. If issues persist, consult the datasheet and application notes for guidance.