Part Details for STP130NH02L by STMicroelectronics
Results Overview of STP130NH02L by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STP130NH02L Information
STP130NH02L by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP130NH02L
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 24V, 0.0044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 50 |
|
$1.4400 / $1.8000 | Buy Now |
|
|
Vyrian | Transistors | 4900 |
|
RFQ |
Part Details for STP130NH02L
STP130NH02L CAD Models
STP130NH02L Part Data Attributes
|
|
STP130NH02L
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP130NH02L
STMicroelectronics
Power Field-Effect Transistor, 90A I(D), 24V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Low Threshold | |
| Avalanche Energy Rating (Eas) | 900 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 24 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |