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Part Details for STP23NM60ND by STMicroelectronics
Results Overview of STP23NM60ND by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP23NM60ND Information
STP23NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP23NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 450 |
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$3.3131 / $8.0808 | Buy Now |
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Bristol Electronics | 134 |
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RFQ | ||
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Quest Components | 360 |
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$4.6898 / $10.8225 | Buy Now | |
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Quest Components | 107 |
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$3.8628 / $6.2640 | Buy Now | |
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Chip Stock | N-channel600V,0.150Ohm,19.5A,FDmeshIIPowerMOSFET(withfastdiode)TO-220 | 1125 |
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DISTI #
STP23NM60ND
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EBV Elektronik | (Alt: STP23NM60ND) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 5324 |
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RFQ |
Part Details for STP23NM60ND
STP23NM60ND CAD Models
STP23NM60ND Part Data Attributes
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STP23NM60ND
STMicroelectronics
Buy Now
Datasheet
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STP23NM60ND
STMicroelectronics
Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 700 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 19.5 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 78 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STP23NM60ND Frequently Asked Questions (FAQ)
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The maximum operating frequency of the STP23NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced performance.
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To ensure proper thermal management, the STP23NM60ND should be mounted on a heat sink with a thermal resistance of less than 10°C/W, and the ambient temperature should be kept below 50°C.
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The recommended gate resistor value for the STP23NM60ND is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, the STP23NM60ND is suitable for high-reliability applications, as it is manufactured using a robust process and has undergone rigorous testing and qualification.
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To protect the STP23NM60ND from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.