Datasheets
STP5NK60Z by: STMicroelectronics

N-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in TO-220 package

Part Details for STP5NK60Z by STMicroelectronics

Overview of STP5NK60Z by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STP5NK60Z

Part # Distributor Description Stock Price Buy
DISTI # 94T3484
Newark Mosfet Transistor, N Channel, 5 A, 600 V, 1.2 Ohm, 10 V, 3.75 V Rohs Compliant: Yes |Stmicroelectronics STP5NK60Z Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1111
  • 1 $1.6400
  • 10 $1.5100
  • 100 $1.3300
  • 500 $1.1100
  • 1,000 $1.0500
  • 2,500 $0.9120
  • 10,000 $0.8620
$0.8620 / $1.6400 Buy Now
DISTI # 57P1995
Newark Mosfet, N Ch, 600V, 5A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STP5NK60Z Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.2900
$1.2900 Buy Now
DISTI # 497-3196-5-ND
DigiKey MOSFET N-CH 600V 5A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube 1103
In Stock
  • 1 $2.0800
  • 50 $1.6742
  • 100 $1.3775
  • 500 $1.1656
  • 1,000 $0.9889
  • 2,000 $0.9395
  • 5,000 $0.9042
  • 10,000 $0.8742
$0.8742 / $2.0800 Buy Now
DISTI # STP5NK60Z
Avnet Americas Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP5NK60Z) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.0386
  • 2,000 $1.0176
  • 4,000 $0.9967
  • 6,000 $0.9757
  • 8,000 $0.9547
  • 10,000 $0.9337
  • 100,000 $0.9127
$0.9127 / $1.0386 Buy Now
DISTI # 511-STP5NK60Z
Mouser Electronics MOSFET N-Ch 600 Volt 5 Amp RoHS: Compliant 1290
  • 1 $1.3100
  • 10 $1.1300
  • 100 $0.9980
  • 500 $0.9020
  • 1,000 $0.8780
  • 2,000 $0.8740
$0.8740 / $1.3100 Buy Now
DISTI # V79:2366_18714466
Arrow Electronics Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Date Code: 1833 Americas - 246
  • 1 $0.6807
$0.6807 Buy Now
STMicroelectronics N-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 1290
  • 1 $1.2800
  • 10 $1.1100
  • 100 $0.9800
  • 500 $0.8800
$0.8800 / $1.2800 Buy Now
Future Electronics N-Channel 600 V 1.6 Ω Zener-Protected SuperMESH™ MOSFET- TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 13 Weeks Container: Tube 0
Tube
  • 50 $1.0200
  • 200 $0.9700
  • 750 $0.9250
  • 1,500 $0.9050
  • 3,750 $0.8550
$0.8550 / $1.0200 Buy Now
Future Electronics N-Channel 600 V 1.6 Ω Zener-Protected SuperMESH™ MOSFET- TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 13 Weeks Container: Tube 0
Tube
  • 50 $1.0200
  • 200 $0.9700
  • 750 $0.9250
  • 1,500 $0.9050
  • 3,750 $0.8550
$0.8550 / $1.0200 Buy Now
Quest Components   144
  • 1 $1.8200
  • 15 $0.9100
  • 67 $0.5460
$0.5460 / $1.8200 Buy Now
DISTI # STP5NK60Z
TME Transistor: N-MOSFET, unipolar, 600V, 3.16A, Idm: 20A, 90W, TO220-3 Min Qty: 1 0
  • 1 $0.9120
  • 5 $0.8200
  • 25 $0.7250
  • 100 $0.6510
  • 500 $0.6070
$0.6070 / $0.9120 RFQ
DISTI # STP5NK60Z
Avnet Silica Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220 Tube (Alt: STP5NK60Z) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days Silica - 850
Buy Now
DISTI # STP5NK60Z
EBV Elektronik Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220 Tube (Alt: STP5NK60Z) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STP5NK60Z

STP5NK60Z CAD Models

STP5NK60Z Part Data Attributes

STP5NK60Z STMicroelectronics
Buy Now Datasheet
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STP5NK60Z STMicroelectronics N-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 220 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STP5NK60Z

This table gives cross-reference parts and alternative options found for STP5NK60Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP5NK60Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STP5NK60Z vs IPB80N06S2LH5ATMA1
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments STP5NK60Z vs NDB706AL
FDP18N50 Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STP5NK60Z vs FDP18N50
IRF610B_FP001 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STP5NK60Z vs IRF610B_FP001
IPD90N06S4L06ATMA1 Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG STP5NK60Z vs IPD90N06S4L06ATMA1
NTP15N40 15A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi STP5NK60Z vs NTP15N40
PHD3055L 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors STP5NK60Z vs PHD3055L
F10F6N Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd STP5NK60Z vs F10F6N
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation STP5NK60Z vs IXFH12N100F
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics STP5NK60Z vs STP9NK65Z

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